Miao Cui, Yutao Cai, Qinglei Bu, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Stephen Talyor, Paul R. Chalker, Cezhou Zhao. The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters. In International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{CuiCBLWMTCZ19, title = {The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters}, author = {Miao Cui and Yutao Cai and Qinglei Bu and Wen Liu and Huiqing Wen and Ivona Z. Mitrovic and Stephen Talyor and Paul R. Chalker and Cezhou Zhao}, year = {2019}, doi = {10.1109/ICICDT.2019.8790909}, url = {https://doi.org/10.1109/ICICDT.2019.8790909}, researchr = {https://researchr.org/publication/CuiCBLWMTCZ19}, cites = {0}, citedby = {0}, pages = {1-4}, booktitle = {International Conference on IC Design and Technology, ICICDT 2019, Suzhou, China, June 17-19, 2019}, publisher = {IEEE}, isbn = {978-1-7281-1853-6}, }