Semi-analytical current source modeling of FinFET devices operating in near/sub-threshold regime with independent gate control and considering process variation - researchr publication authors

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Tiansong Cui, Yanzhi Wang, Xue Lin, Shahin Nazarian, Massoud Pedram. Semi-analytical current source modeling of FinFET devices operating in near/sub-threshold regime with independent gate control and considering process variation. In 19th Asia and South Pacific Design Automation Conference, ASP-DAC 2014, Singapore, January 20-23, 2014. pages 167-172, IEEE, 2014. [doi]

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