Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick, Shahar Kvatinsky. C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory. IEEE Trans. Circuits Syst. I Regul. Pap., 69(4):1595-1605, 2022. [doi]
Abstract is missing.