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Degradation of 0.25 μm GaN HEMTs under high temperature stress test

M. Dammann, M. Baeumler, P. Brückner, W. Bronner, Stephan Maroldt, H. Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle. Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectronics Reliability, 55(9-10):1667-1671, 2015. [doi]

Authors

M. Dammann

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M. Baeumler

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P. Brückner

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W. Bronner

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Stephan Maroldt

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H. Konstanzer

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Matthias Wespel

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Rüdiger Quay

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Michael Mikulla

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Andreas Graff

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M. Lorenzini

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M. Fagerlind

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P. J. van der Wel

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T. Rödle

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