M. Dammann, M. Baeumler, P. Brückner, W. Bronner, Stephan Maroldt, H. Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle. Degradation of 0.25 μm GaN HEMTs under high temperature stress test. Microelectronics Reliability, 55(9-10):1667-1671, 2015. [doi]
@article{DammannBBBMKWQM15,
title = {Degradation of 0.25 μm GaN HEMTs under high temperature stress test},
author = {M. Dammann and M. Baeumler and P. Brückner and W. Bronner and Stephan Maroldt and H. Konstanzer and Matthias Wespel and Rüdiger Quay and Michael Mikulla and Andreas Graff and M. Lorenzini and M. Fagerlind and P. J. van der Wel and T. Rödle},
year = {2015},
doi = {10.1016/j.microrel.2015.06.042},
url = {http://dx.doi.org/10.1016/j.microrel.2015.06.042},
researchr = {https://researchr.org/publication/DammannBBBMKWQM15},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {55},
number = {9-10},
pages = {1667-1671},
}