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Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology

M. Dammann, M. Baeumler, P. Brückner, T. Kemmer, H. Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay. Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectronics Reliability, 88:385-388, 2018. [doi]

Authors

M. Dammann

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M. Baeumler

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P. Brückner

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T. Kemmer

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H. Konstanzer

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Andreas Graff

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Michél Simon-Najasek

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Rüdiger Quay

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