Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology

M. Dammann, M. Baeumler, P. Brückner, T. Kemmer, H. Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay. Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. Microelectronics Reliability, 88:385-388, 2018. [doi]

Abstract

Abstract is missing.