Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Jérémie Renaudier, Cristell Maneux. 0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{\max}$ and BVCE0 > 4.5 V. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021. pages 1-4, IEEE, 2021. [doi]
@inproceedings{DavyNRMDMRM21,
title = {0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{\max}$ and BVCE0 > 4.5 V},
author = {Nil Davy and Virginie Nodjiadjim and Muriel Riet and Colin Mismer and Marina Deng and Chhandak Mukherjee and Jérémie Renaudier and Cristell Maneux},
year = {2021},
doi = {10.1109/BCICTS50416.2021.9682209},
url = {https://doi.org/10.1109/BCICTS50416.2021.9682209},
researchr = {https://researchr.org/publication/DavyNRMDMRM21},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021},
publisher = {IEEE},
isbn = {978-1-6654-3990-9},
}