Table of Contents

• Optimized Buffer Stack with Carbon-Doping for Performance Improvement of GaN HEMTsAjay Shanbhag, Sruthi M. P, Farid Medjdoub, Anjan Chakravorty, Nandita DasGupta, Amitava Dasgupta. 1-4 [doi]
• A Multi-mode Linear Optical Modulator Driver Circuit in 130 nm SiGe BiCMOS TechnologyAdel Fatemi, Gerhard Kahmen, Andrea Malignaggi. 1-4 [doi]
• Thermal Resistance Formulation and Analysis of III-V FETs Based on DC Electrical DataDavid E. Root, Jianjun Xu, Masaya Iwamoto. 1-4 [doi]
• Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF CircuitsJosip Zilak, Zeljko Osrecki, Marko Koricic, Filip Bogdanovic, Tomislav Suligoj. 1-4 [doi]
• InP DHBT Characterization up to 500 GHz and Compact Model Validation Towards THz Circuit DesignMarina Deng, Chhandak Mukherjee, Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Jérémie Renaudier, Magali De Matos, Cristell Maneux. 1-4 [doi]
• Active Conducted EMI Suppression in GaN Switching Power CircuitsDongsheng Brian Ma, Dong Yan, Lixiong Du. 1-6 [doi]
• Charge Trapping in GaN Power Transistors: Challenges and PerspectivesMatteo Meneghini, Nicola Modolo, Arianna Nardo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Christian Koller, Sebastien Sicre, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni. 1-4 [doi]
• A S/C/X/Ku-band, 4-Tap, Digitally Controllable Analog FIR Filter with Reconfigurable Bandwidth and RF Filtering ProfileMoon-Kyu Cho, Ickhyun Song, Nelson E. Lourenco, Adilson S. Cardoso, Christopher T. Coen, William B. Hunter, Douglas R. Denison, John D. Cressler. 1-4 [doi]
• Silicon Photonics Platform from Datacom to Sensing ApplicationsFrédéric Boeuf, Cyrille Barrera, Ismael Charlet, Michele Calvo, Antonio Fincato, Stéphane Monfray, Sylvain Guerber, Sebastien Cremer, Nathalie Vulliet, Jean Francois Carpentier, Luca Maggi, Daivid Fowler, Christophe Jany, Patrick Le Maitre, Maurin Douix, Régis Orobtchouk, Delphine Marris-Morini, Laurent Vivien. 1-8 [doi]
• An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTsChristoph Weimer, Paulius Sakalas, M. Müller, G. G. Fischer, Michael Schröter. 1-4 [doi]
• The future of SiGe BiCMOS: bipolar amplifiers for high-performance millimeter-wave applicationsPeter Magnée, Domine Leenaerts, Mark P. van der Heijden, Thanh Viet Dinh, Ivan To, Ihor Brunets. 1-7 [doi]
• 22FDSOI device towards RF and mmWave applicationsZhixing Zhao, Steffen Lehmann, Wei Lun Oo, Amit Kumar Sahoo, Shafi Syed, Quang Huy Le, Dang Khoa Huynh, Talha Chohan, Dirk Utess, Dominik Kleimaier, Maciej Wiatr, Sabine Kolodinski, Jerome Mazurier, Jan Hoentschel, Andreas Knorr, Ned Cahoon, Stefan Kneitz. 1-6 [doi]
• A 2-Stage C-Band 130W GaN MMIC Power Amplifier in an Overmold QFN PackageBo Zhao, Chris Sanabria, Terry Hon. 1-4 [doi]
• An 8.2-pJ/bit, 56 Gb/s Traveling-wave Modulator Driver with Large Reverse TerminationsHector Andrade, Aaron Maharry, Luis A. Valenzuela, Navid Hosseinzadeh, Clint Schow, James F. Buckwalter. 1-4 [doi]
• Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA ApplicationsAjay Raman, Vibhor Jain, Elanchezhian Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Yves Ngu, Alvin Joseph. 1-4 [doi]
• Compact Design of Passive Networks in RF and Millimeter-Wave Integrated Circuits (invited)Xuanyi Dong, Andreas Weisshaar. 1-4 [doi]
• 100-300GHz Wireless: ICs, Arrays, and SystemsMark J. W. Rodwell, Ali A. Farid, Ahmed S. H. Ahmed, M. Seo, Utku Soylu, A. Alizadeh, Navid Hosseinzadeh. 1-4 [doi]
• Dynamic Behavior of Breakdown Mechanisms in SiGe HBTsHarrison P. Lee, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, John D. Cressler. 1-4 [doi]
• Frequency Performance Improvements for SLCFET Amplifier Through Device ScalingShamima Afroz, Timothy Vasen, Brian Novak, Ken A. Nagamatsu, Patrick Shea, Sam Wanis, Robert S. Howell, Josephine Chang. 1-4 [doi]
• A 10-130 GHz Distributed Power Amplifier Achieving 2.6 THz GBW with Peak 13.1 dBm Output P1dB for Ultra-Wideband Applications in 90nm SiGe HBT TechnologyOguz Kazan, Gabriel M. Rebeiz. 1-4 [doi]
• A Simple and Efficient Procedure for Identifying the Compressing Stage in Two-Stage AmplifiersAnton N. Atanasov, Waqam H. R. A. Mukhtar Ahmad, Mark S. Oude Alink, Frank E. van Vliet. 1-4 [doi]
• Design, Modelling and Characterization of a 3-Vppd 90-GBaud Over-110-GHz-Bandwidth Linear Driver in 0.5-μm InP DHBTs for Optical CommunicationsRomain Hersent, Tom K. Johansen, Virginie Nodjiadjim, F. Jorge, Bernadette Duval, Fabrice Blache, Muriel Riet, Colin Mismer, Agnieszka Konczykowska. 1-4 [doi]
• A Novel Method to Determine Transistor Geometry for PA DesignYingying Yang, Bin Li, Brian Johnson, Hal Banbrook. 1-4 [doi]
• Physics of Hot Carrier Degradation Under Off-State Mode Operation in High Performance NPN SiGe HBTsDimitris P. Ioannou, Uppili S. Raghunathan, Dave Brochu, Adam W. DiVergilio, Vibhor Jain, John J. Pekarik. 1-4 [doi]
• A 268-325 GHz 5.2 dBm Psat Frequency Doubler Using Transformer-Based Mode Separation in SiGe BiCMOS TechnologySascha Breun, Albert-Marcel Schrotz, Marco Dietz, Vadim Issakov, Robert Weigel. 1-4 [doi]
• A Single-Chip 25.3-28.0 GHz SiGe BiCMOS PLL with -134 dBc/Hz Phase Noise at 10 MHz Offset and -96 dBc Reference SpursMark D. Hickle, Kevin Grout, Curtis Grens, Gregory M. Flewelling, Steven Eugene Turner. 1-4 [doi]
• High-Gain 500-GHz InP HBT Power AmplifiersJerome Cheron, Rob D. Jones, Richard A. Chamberlin, Dylan F. Williams, Miguel E. Urteaga, Kassiopeia A. Smith, Nicholas R. Jungwirth, Bryan T. L. Bosworth, Christian J. Long, Nathan D. Orloff, Peter H. Aaen, Ari D. Feldman. 1-4 [doi]
• A 3.5-GHz 350-W Black-Box Doherty Amplifier Design Method Without Using Transistor ModelsNoriaki Tawa, Paolo Enrico de Falco, Ohgami Kazuya, Taylor W. Barton, Tomoya Kaneko. 1-4 [doi]
• Electric Field Engineering in Graded-Channel GaN-Based HEMTsNivedhita Venkatesan, Jeong-sun Moon, Patrick Fay. 1-4 [doi]
• A 40Gb/s Linear Redriver with Multi-Band Equalization in 130nm SiGe BiCMOSTong Liu, Yuanming Zhu, Anil Korkmaz, Siamak Delshadpour, Samuel Palermo. 1-4 [doi]
• GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF ApplicationsAnthony E. Parker. 1-8 [doi]
• Comparison on spectral purity of two SiGe D-Band frequency octuplers in MIMO radar MMICsJustin Romstadt, Hakan Papurcu, Ahmad Zaben, Steffen Hansen, Klaus Aufinger, Nils Pohl. 1-4 [doi]
• Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit PerformanceSébastien Fregonese, Chhandak Mukherjee, Holger Rücker, Pascal Chevalier 0002, Gerhard Fischer, Didier Céli, Marina Deng, Marine Couret, François Marc, Cristell Maneux, Thomas Zimmer. 1-7 [doi]
• Advances in Terahertz CMOS for 6GMinoru Fujishima. 1-4 [doi]
• From Transistor Parameters to PA Circuit Performance (Invited)Peter J. Zampardi. 1-7 [doi]
• Analog 2: 1 Multiplexer with over 110 GHz Bandwidth in SiGe BiCMOS TechnologyTobias Tannert, Markus Grözing, Manfred Berroth, Christian Schmidt 0001, Jung Han Choi, Christoph Caspar, Jonathan Schostak, Volker Jungnickel, Ronald Freund, Holger Rücker. 1-4 [doi]
• Modulator Technologies for Intra-Datacenter Optical Interconnects Beyond 1TbpsMohammad Sotoodeh, Ryohei Urata, Xiang Zhou, Lieven Verslegers, Hong Liu. 1-5 [doi]
• 135GHz CMOS / LTCC MIMO Receiver Array Tile ModulesAli A. Farid, Ahmed S. H. Ahmed, Aditya Dhananjay, Panagiotis Skrimponis, Sundeep Rangan, Mark J. W. Rodwell. 1-4 [doi]
• Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling FrameworkIvan Berdalovic, Mirko Poljak, Tomislav Suligoj. 1-4 [doi]
• Evaluation of Stacked-CNTFET Structures for High-performance ApplicationsBoli Peng, Sven Mothes, Manojkumar Annamalai, Michael Schröter. 1-4 [doi]
• Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTsM. Müller, Michael Schröter, Christoph Jungemann, Christoph Weimer. 1-4 [doi]
• Opportunities for Millemeter-Wave Wireless Technologies Using MetasurfacesAndrea Alù. 1-4 [doi]
• Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applicationsS. Phillips, Ed Preisler, J. Zheng, S. Chaudhry, M. Racanelli, M. Müller, Michael Schröter, W. McArthur, D. Howard. 1-5 [doi]
• Reference-less Bang-bang CDR with Enhanced Frequency Acquisition Range Using Static and Modulated Integral Branch Offset CurrentsMohammed Iftekhar, Sergiy Gudyriev, Johann-Christoph Scheytt. 1-4 [doi]
• RF LDMOS Transistor Plastic Immunity Enhancement in Power Amplifier Module for 5G ApplicationsVikas Shilimkar, Kevin Kim. 1-4 [doi]
• 10W and 30W, 32-37 GHz, Ka-Band GaN MMIC Power Amplifiers on SiCMichael Litchfield, Douglas Dugas. 1-4 [doi]
• Silicon Photonic Mach-Zehnder Modulator Driver for 800+Gb/s Optical LinksTie Sun, John Rogers, Mike Rogers, Ian Dedic, Mahdi Parvizi, Ying Zhao, Li Chen, Long Chen, Ricardo Aroca. 1-5 [doi]
• Yield and Scaling Improvements in Next-Generation 2.5 THz SLCFET Devices to Enable Ultra-wideband DC-110GHz Switch MMICsJerome T. Mlack, Nick Edwards, Brian Novak, Annaliese Drechsler, Jordan Merkel, Timothy Vasen, Daniel J. Hannan, Paul Brabant, Ishan Wathuthanthri, Justin Parke, Sam Wanis, Robert S. Howell, Ken A. Nagamatsu. 1-4 [doi]
• Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTsSruthi M. P, Ajay Shanbhag, Anjan Chakravorty, Nandita DasGupta, Amitava Dasgupta. 1-4 [doi]
• A Simple Technique to Estimate Surface Traps from DC Transfer Characteristics of GaN-Based HEMTSujan Sarkar, Ramdas P. Khade, Nandita DasGupta, Amitava Dasgupta. 1-4 [doi]
• 0.4-μm InP/InGaAs DHBT with a 380-GHz ${f_{T}}$, > 600-GHz $f_{\max}$ and BVCE0 > 4.5 VNil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Jérémie Renaudier, Cristell Maneux. 1-4 [doi]
• A 6-bit 56-GSa/s DAC in 55 nm SiGe BiCMOSBart Moeneclaey, Michiel Verplaetse, Hannes Ramon, Nishant Singh, Haolin Li, Joris Van Kerrebrouck, Xin Yin, Guy Torfs. 1-4 [doi]
• An Over 130-GHz-Bandwidth InP-DHBT Baseband Amplifier ModuleTeruo Jyo, Munehiko Nagatani, Miwa Mutoh, Yuta Shiratori, Hitoshi Wakita, Hiroyuki Takahashi. 1-4 [doi]
• SiGe HBTs with ${f_{T}/f_{\max}\, \sim\, 375/510GHz}$ Integrated in 45nm PDSOI CMOSJohn Pekarik, Vibhor Jain, Crystal Kenney, Judson Holt, Shweta Khokale, Sudesh Saroop, Jeffrey B. Johnson, Kenneth Stein, Viorel Ontalus, Christopher Durcan, Mona Nafari, Tayel Nesheiwat, Sangameshwar Saudari, Elahe Yarmoghaddam, Saloni Chaurasia, Alvin Joseph. 1-4 [doi]
• High-Speed TLP and ESD Characterization of ICsKathleen Muhonen, Evan Grund, Robert Ashton. 1-6 [doi]
• Analog Demultiplexer Operating at up to 200 GS/s Using Four Time Interleaved Switched Emitter Followers with a 50% Duty Cycle ClockPhilipp Thomas, Markus Grözing, Manfred Berroth. 1-4 [doi]
• Electro-Thermal and Trapping Characterization of AlGaN/GaN RF Power HEMTsJosé Pedro, João Gomes, Luis Nunes. 1-6 [doi]