Harrison P. Lee, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, John D. Cressler. Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021. pages 1-4, IEEE, 2021. [doi]
Abstract is missing.