Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs - researchr publication authors

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Harrison P. Lee, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, John D. Cressler. Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021. pages 1-4, IEEE, 2021. [doi]

This author has not been identified. Look up 'Harrison P. Lee' in GoogleThis author has not been identified. Look up 'Jeffrey W. Teng' in GoogleThis author has not been identified. Look up 'Nelson Sepúlveda-Ramos' in GoogleThis author has not been identified. Look up 'John D. Cressler' in Google

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