GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF Applications

Anthony E. Parker. GaN and GaAs HEMT Channel Current Model for Nonlinear Microwave and RF Applications. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021. pages 1-8, IEEE, 2021. [doi]

Abstract

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