Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs

Sruthi M. P, Ajay Shanbhag, Anjan Chakravorty, Nandita DasGupta, Amitava Dasgupta. Physics based Compact Model for Drain Current in Fin-Shaped GaN MIS-HEMTs. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2021, Monterey, CA, USA, December 5-8, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

Abstract is missing.