A Low-Power Variation-Tolerant 7T SRAM With Enhanced Read Sensing Margin for Voltage Scaling

Xi Deng, Runze Yu, Zhenhao Li, Haoming Zhang, Zhenglin Liu. A Low-Power Variation-Tolerant 7T SRAM With Enhanced Read Sensing Margin for Voltage Scaling. IEEE Trans. on CAD of Integrated Circuits and Systems, 43(8):2354-2364, August 2024. [doi]

@article{DengYLZL24,
  title = {A Low-Power Variation-Tolerant 7T SRAM With Enhanced Read Sensing Margin for Voltage Scaling},
  author = {Xi Deng and Runze Yu and Zhenhao Li and Haoming Zhang and Zhenglin Liu},
  year = {2024},
  month = {August},
  doi = {10.1109/TCAD.2024.3367233},
  url = {https://doi.org/10.1109/TCAD.2024.3367233},
  researchr = {https://researchr.org/publication/DengYLZL24},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. on CAD of Integrated Circuits and Systems},
  volume = {43},
  number = {8},
  pages = {2354-2364},
}