Thomas Detzel, Michael Glavanovics, Karin Weber. Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions. Microelectronics Reliability, 44(9-11):1485-1490, 2004. [doi]
@article{DetzelGW04,
title = {Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions},
author = {Thomas Detzel and Michael Glavanovics and Karin Weber},
year = {2004},
doi = {10.1016/j.microrel.2004.07.044},
url = {http://dx.doi.org/10.1016/j.microrel.2004.07.044},
researchr = {https://researchr.org/publication/DetzelGW04},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {44},
number = {9-11},
pages = {1485-1490},
}