Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions

Thomas Detzel, Michael Glavanovics, Karin Weber. Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions. Microelectronics Reliability, 44(9-11):1485-1490, 2004. [doi]

Abstract

Abstract is missing.