On the design of balanced carbon nanotube field-effect transistor gates

Kapil Dev, Yehia Massoud. On the design of balanced carbon nanotube field-effect transistor gates. In 18th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2011, Beirut, Lebanon, December 11-14, 2011. pages 204-207, IEEE, 2011. [doi]

@inproceedings{DevM11,
  title = {On the design of balanced carbon nanotube field-effect transistor gates},
  author = {Kapil Dev and Yehia Massoud},
  year = {2011},
  doi = {10.1109/ICECS.2011.6122249},
  url = {http://dx.doi.org/10.1109/ICECS.2011.6122249},
  researchr = {https://researchr.org/publication/DevM11},
  cites = {0},
  citedby = {0},
  pages = {204-207},
  booktitle = {18th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2011, Beirut, Lebanon, December 11-14, 2011},
  publisher = {IEEE},
  isbn = {978-1-4577-1845-8},
}