Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS

Timothy O. Dickson, Sorin P. Voinigescu. Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS. J. Solid-State Circuits, 42(10):2077-2085, 2007. [doi]

@article{DicksonV07,
  title = {Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS},
  author = {Timothy O. Dickson and Sorin P. Voinigescu},
  year = {2007},
  doi = {10.1109/JSSC.2007.904152},
  url = {https://doi.org/10.1109/JSSC.2007.904152},
  researchr = {https://researchr.org/publication/DicksonV07},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {42},
  number = {10},
  pages = {2077-2085},
}