An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs

Zhihao Ding, Guangxi Hu, Jinglun Gu, Ran Liu, Lingli Wang, Tingao Tang. An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs. Microelectronics Journal, 42(3):515-519, 2011. [doi]

@article{DingHGLWT11,
  title = {An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs},
  author = {Zhihao Ding and Guangxi Hu and Jinglun Gu and Ran Liu and Lingli Wang and Tingao Tang},
  year = {2011},
  doi = {10.1016/j.mejo.2010.11.002},
  url = {http://dx.doi.org/10.1016/j.mejo.2010.11.002},
  researchr = {https://researchr.org/publication/DingHGLWT11},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {42},
  number = {3},
  pages = {515-519},
}