Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage

Stefan Doering, Ralf Rudolf, Martin Pinkert, Hagen Roetz, Catejan Wagner, Stefan Eckl, Marc Strasser, Andre Wachowiak, Thomas Mikolajick. Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage. Microelectronics Reliability, 54(9-10):2128-2132, 2014. [doi]

@article{DoeringRPRWESWM14,
  title = {Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage},
  author = {Stefan Doering and Ralf Rudolf and Martin Pinkert and Hagen Roetz and Catejan Wagner and Stefan Eckl and Marc Strasser and Andre Wachowiak and Thomas Mikolajick},
  year = {2014},
  doi = {10.1016/j.microrel.2014.07.021},
  url = {http://dx.doi.org/10.1016/j.microrel.2014.07.021},
  researchr = {https://researchr.org/publication/DoeringRPRWESWM14},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {54},
  number = {9-10},
  pages = {2128-2132},
}