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Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage

Stefan Doering, Ralf Rudolf, Martin Pinkert, Hagen Roetz, Catejan Wagner, Stefan Eckl, Marc Strasser, Andre Wachowiak, Thomas Mikolajick. Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage. Microelectronics Reliability, 54(9-10):2128-2132, 2014. [doi]

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