Observation of Power MOSFET Composed of Silicon Carbide with a Planar Type in the Voltage Applying State Using a Scanning Probe Microscope

A. Doi, Nobuo Satoh, Hidekazu Yamamoto. Observation of Power MOSFET Composed of Silicon Carbide with a Planar Type in the Voltage Applying State Using a Scanning Probe Microscope. In 30th IEEE International Symposium on Industrial Electronics, ISIE 2021, Kyoto, Japan, June 20-23, 2021. pages 1-6, IEEE, 2021. [doi]

Abstract

Abstract is missing.