Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai. Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectronics Reliability, 54(4):725-729, 2014. [doi]
@article{DouSNKAKNSWTNI14,
title = {Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement},
author = {Chunmeng Dou and Tomoya Shoji and Kazuhiro Nakajima and Kuniyuki Kakushima and Parhat Ahmet and Yoshinori Kataoka and Akira Nishiyama and Nobuyuki Sugii and Hitoshi Wakabayashi and Kazuo Tsutsui and Kenji Natori and Hiroshi Iwai},
year = {2014},
doi = {10.1016/j.microrel.2013.11.016},
url = {http://dx.doi.org/10.1016/j.microrel.2013.11.016},
researchr = {https://researchr.org/publication/DouSNKAKNSWTNI14},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {54},
number = {4},
pages = {725-729},
}