Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

E. A. Douglas, C. Y. Chang, B. P. Gila, M. R. Holzworth, K. S. Jones, L. Liu, Jinhyung Kim, Soohwan Jang, G. D. Via, Fan Ren, S. J. Pearton. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors. Microelectronics Reliability, 52(1):23-28, 2012. [doi]

Abstract

Abstract is missing.