A 2kb built-in row-controlled dynamic voltage scaling near-/sub-threshold FIFO memory for WBANs

Wei-Hung Du, Po-Tsang Huang, Ming-Hung Chang, Wei Hwang. A 2kb built-in row-controlled dynamic voltage scaling near-/sub-threshold FIFO memory for WBANs. In Proceedings of Technical Program of 2012 VLSI Design, Automation and Test, VLSI-DAT 2012, Hsinchu, Taiwan, April 23-25, 2012. pages 1-4, IEEE, 2012. [doi]

@inproceedings{DuHCH12,
  title = {A 2kb built-in row-controlled dynamic voltage scaling near-/sub-threshold FIFO memory for WBANs},
  author = {Wei-Hung Du and Po-Tsang Huang and Ming-Hung Chang and Wei Hwang},
  year = {2012},
  doi = {10.1109/VLSI-DAT.2012.6212588},
  url = {http://dx.doi.org/10.1109/VLSI-DAT.2012.6212588},
  researchr = {https://researchr.org/publication/DuHCH12},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {Proceedings of Technical Program of 2012 VLSI Design, Automation and Test, VLSI-DAT 2012, Hsinchu, Taiwan, April 23-25, 2012},
  publisher = {IEEE},
  isbn = {978-1-4577-2080-2},
}