Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD - researchr publication authors

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Zhichao Du, Chuanxue Sun, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Chengji Jin, Jixuan Wu, Jiezhi Chen. Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD. In IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2023, Hefei, China, October 27-29, 2023. pages 51-52, IEEE, 2023. [doi]

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