Jiezhi Chen - researchr alias

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Viewing Publication 1 - 27 from 27

2023

Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCADZhichao Du, Chuanxue Sun, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Chengji Jin, Jixuan Wu, Jiezhi Chen. icta3 2023: 51-52 [doi]

High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data StorageXiaotong Fang, Meng Zhang 0014, Yifan Guo, Fei Chen, Binglu Chen, Xuepeng Zhan, Jixuan Wu, Fei Wu 0005, Jiezhi Chen. tcad, 42(10):3224-3235, October 2023. [doi]

Flash-based Computing-in-memory Architectures with High-accuracy and Robust Reliabilities for General-purpose ApplicationsYang Feng, Yueran Qi, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen. asicon 2023: 1-4 [doi]

Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editingYang Feng, Bing Chen, Mingfeng Tang, Yuerang Qi, Maoying Bai, Chengcheng Wang, Hai Wang, Xuepeng Zhan, Junyu Zhang, Jing Liu, Jixuan Wu, Jiezhi Chen. chinaf, 66(12), December 2023. [doi]

Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer DepositionJunyao Mei, Bo Chen, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen. icta3 2023: 53-54 [doi]

Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computingShuhao Wu, Bo Chen, Chengcheng Wang, Junyao Mei, Maoying Bai, Xuepeng Zhan, Jixuan Wu, Junshuai Chai, Hao Xu, Xiaolei Wang, Jiezhi Chen. mj, 137:105818, 2023. [doi]

One-shot Read Processing to Enhance Cold Data Retention in Charge-trap TLC 3D NAND FlashShaoqi Yang, Xiaohuan Zhao, Kenie Xie, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen. asicon 2023: 1-4 [doi]

Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical UnderstandingDong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong. vlsit 2023: 1-2 [doi]

Error Bits Recovering in 3D NAND Flash Memory: A Novel State-Shift Re-Program (SRP) SchemeXiaohuan Zhao, Shaoqi Yang, Kenie Xie, Yang Feng, Qianwen Wang, Pengpeng Sang, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen. icta3 2023: 99-100 [doi]

2022

Long Time-Series Mapping and Change Detection of Coastal Zone Land Use Based on Google Earth Engine and Multi-Source Data FusionDong Chen, Yafei Wang, Zhenyu Shen, Jinfeng Liao, Jiezhi Chen, Shaobo Sun. remotesensing, 14(1):1, 2022. [doi]

Work-in-Progress: High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory as Hot-data StorageXiaotong Fang, Meng Zhang 0014, Yifan Guo, Fei Chen, Binglu Chen, Xuepeng Zhan, Jixuan Wu, Fei Wu 0005, Jiezhi Chen. cases 2022: 11-12 [doi]

Optimal Program-Read Schemes Toward Highly Reliable Open Block Operations in 3-D Charge-Trap NAND Flash MemoryMenghua Jia, Yachen Kong, Xuepeng Zhan, Meng Zhang 0014, Fei Wu 0005, Jiezhi Chen. tcad, 41(11):4797-4807, 2022. [doi]

Experimentally-Validated Crossbar Model for Defect-Aware Training of Neural NetworksRuibin Mao, Bo Wen, Mingrui Jiang, Jiezhi Chen, Can Li. tcasII, 69(5):2468-2472, 2022. [doi]

Re-LSM: A ReRAM-Based Processing-in-Memory Framework for LSM-Based Key-Value StoreQian Wei, Zhaoyan Shen, Yiheng Tong, Zhiping Jia, Lei Ju, Jiezhi Chen, Bingzhe Li. iccad 2022: [doi]

Large Suppression to Lateral Charge Migration (LCM) Related Error Bits in Charge-Trap TLC 3D NAND FlashKenie Xie, Pena Guo, Fei Chen, Binglu Chen, Xiaotong Fang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen. icta3 2022: 24-25 [doi]

Voltage and temperature dependence of Random Telegraph Noise and their impacts on random number generatorMingtao Xu, Bo Chen, Qi Jin, Lu Tai, Xuepeng Zhan, Jiezhi Chen. mj, 125:105450, 2022. [doi]

Spatiotemporal Pattern Analysis of Land Use Functions in Contiguous Coastal Cities Based on Long-Term Time Series Remote Sensing Data: A Case Study of Bohai Sea Region, ChinaYuxuan Ye, Yafei Wang, Jinfeng Liao, Jiezhi Chen, Yangfan Zou, Yuan Liu, Chunye Feng. remotesensing, 14(15):3518, 2022. [doi]

Insights of VG-dependent threshold voltage fluctuations from dual-point random telegraph noise characterization in nanoscale transistorsXuepeng Zhan, Jiezhi Chen, Zhigang Ji. chinaf, 65(8):1-2, 2022. [doi]

2021

2020

Retention Correlated Read Disturb Errors in 3-D Charge Trap NAND Flash Memory: Observations, Analysis, and SolutionsYachen Kong, Meng Zhang 0014, Xuepeng Zhan, Rui Cao, Jiezhi Chen. tcad, 39(11):4042-4051, 2020. [doi]

Dual-Point Technique for Multi-Trap RTN Signal ExtractionXuepeng Zhan, Yifang Xi, Qianwen Wang, Weiqiang Zhang, Zhigang Ji, Jiezhi Chen. access, 8:88141-88146, 2020. [doi]

2019

Program/Erase Cycling Enhanced Lateral Charge Diffusion in Triple-Level Cell Charge-Trapping 3D NAND Flash MemoryRui Cao, Jixuan Wu, Wenjing Yang, Jiezhi Chen, Xiangwei Jiang. irps 2019: 1-4 [doi]

Scaling Behaviour of State-to-State Coupling During Hole Trapping at Si/SiO2Xiaolei Ma, Xiangwei Jiang, Jiezhi Chen, Liwei Wang 0003, Yunfei En. irps 2019: 1-4 [doi]

2011

An Artificial Intelligence Approach to Price Design for Improving AQM PerformanceHao Wang, Jiezhi Chen, Chenda Liao, Zuohua Tian. globecom 2011: 1-5 [doi]

Design and analysis of effective price for congestion controlHao Wang, Bo Wang, Jiezhi Chen, Zuohua Tian. lcn 2011: 510-518 [doi]

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