Table of Contents

• A 52.01 TFLOPS/W Diffusion Model Processor with Inter-Time-Step Convolution-Attention-Redundancy Elimination and Bipolar Floating-Point MultiplicationYubin Qin, Yang Wang 0089, Xiaolong Yang, Zhiren Zhao, Shaojun Wei, Yang Hu 0001, Shouyi Yin. 1-2 [doi]
• A 0.88pJ/bit 112Gb/s PAM4 Transmitter with $1\mathrm{V}_{\text{ppd}}$ Output Swing and 5-Tap Analog FFE in 7nm FinFET CMOSZeynep Toprak Deniz, Timothy O. Dickson, Martin Cochet, Jonathan E. Proesel, John F. Bulzacchelli, Herschel A. Ainspan, Matthias Brändli, Thomas Morf, Michael P. Beakes, Mounir Meghelli. 1-2 [doi]
• FSNAP: An Ultra-Energy-Efficient Few-Spikes-Neuron Based Reconfigurable SNN Processor Enabling Unified On-Chip Learning and Accuracy-Driven Adaptive Time-Window TuningRuixin Mao, Lin Tang, Zihan Xia, Zhaomin Zhang, Aoyu Shen, Yu Long 0005, Jinhong Guo, Yunpeng He, Lai Zhang, Shujuan Wang, Liang Zhou, Liang Chang 0002, Shanshan Liu, Jun Zhou 0017. 1-2 [doi]
• Replacement Metal Gate Process Extendible Beyond 2-nm Node with Superior Gate ConductivityNaomi Yoshida, Ilanit Fisher, He Ren, Chi-Chou Lin, Chenfei Shen, Yongjing Lin, Yi Xu, Michael S.-. C. Chen, Mehul Naik. 1-2 [doi]
• Empowering Local Differential Privacy: A 5718 TOPS/W Analog PUF-Based In-Memory Encryption Macro for Dynamic Edge SecurityChih-Sheng Lin, Bo-Cheng Chiou, Yin-Jia Yang, Jian-Wei Su, Kuo-Hua Tseng, Yun-Ting Ho, Chih-Ming Lai, Sih-Han Li, Tian-Sheuan Chang, Shan-Ming Chang, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Tuo-Hung Hou. 1-2 [doi]
• Highly Sensitive Multimodal CMOS Antifouling Sensor Array with Multi-Use Electrodes for Single-Cell-Level Profiling of Biophysical and Biochemical ParametersHangxing Liu, Fuze Jiang, Adam Y. Wang, Zhikai Huang, Ying Kong, Marco Saif, Dongwon Lee, Thomas Burger, Jing Wang, Hua Wang 0006. 1-2 [doi]
• Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable Cell Characteristics for 8th Generation 512Gb 3D NAND Flash MemoryHang-Ah Park, Sejun Park, Min-Tai Yu, Ye Chan Kim, Cheon Ho Park, Jung Hoon Lee, Jun Eon Jin, Dawoon Jeung, Hauk Han, Tai-Soo Lim, Min Kyu Jeong, Mincheol Park, Bong-Tae Park, Sunghoi Hur. 1-2 [doi]
• Achieving 1-nm-Scale Equivalent Oxide Thickness Top Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors with CMOS-Friendly ApproachesJung-Soo Ko, Alex Shearer, Sol Lee, Kathryn M. Neilson, Marc Jaikissoon, Kwanpyo Kim, Stacey Bent, Krishna Saraswat, Eric Pop. 1-2 [doi]
• Highly Enhanced Memory Window of 17.8V in Ferroelectric FET with IGZO Channel via Introduction of Intermediate Oxygen-Deficient Channel and Gate InterlayerSijung Yoo, Donghoon Kim, Duk-Hyun Choe, Hyun-Jae Lee, Yunseong Lee, Sanghyun Jo, Yoonsang Park, Ki Hong Kim, Kyooho Jung, Moonil Jung, Kwang Hee Lee, Jee-Eun Yang, Sangwook Kim, Seung Geol Nam. 1-2 [doi]
• State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing ApplicationsH. Y. Cheng, Z. L. Liu, A. Majumdar, Alexander Grun, A. Ray, J. Su, Malte J. Rasch, Fabio Carta, Lynne M. Gignac, C. Lavoie, C. W. Cheng, M. Bright Sky, H. L. Lung. 1-2 [doi]
• Field Plate and Package Optimization for GaN Devices and SystemsSheng-Hsi Hung, Tz-Wun Wang, Chien-Wei Cho, Po-Jui Chiu, Chi-yu Chen, Ke-Horng Chen, Kuo-Lin Zheng, Chih-Chen Li. 1-2 [doi]
• A Δ-Based Spike Sorting SoC with End-to-End Implementation of Event-Driven Binary Autoencoder Neural Network in Analog CIM Achieving 94.54% Accuracy and 3.11μW/chEdward Jongyoon Choi, Vincent Lukito, Injun Choi, Seoyoung Lee, Ik Joon Chang, Sohmyung Ha, Minkyu Je. 1-2 [doi]
• A 79.3fsrms Jitter Fractional-N Digital PLL Based on a DTC Chopping TechniqueRiccardo Moleri, Simone Mattia Dartizio, Michele Rossoni, Giacomo Castoro, Francesco Tesolin, Dmytro Cherniak, Carlo Samori, Andrea Leonardo Lacaita, Salvatore Levantino. 1-2 [doi]
• A 4.7-to-5.3Gbps Fault-Injection Attack Resistant AES-256 Engine Using Isomorphic Composite Fields in Intel 4 CMOSRaghavan Kumar, Sachin Taneja, Vivek De, Sanu Mathew. 1-2 [doi]
• Back-side Design Methodology for Power Delivery Network and Clock RoutingPruek Vanna-Iampikul, Hang Yang, Jungyoun Kwak, Joyce X. Hu, Amaan Rahman, Nesara Eranna Bethur, Callie Hao, Shimeng Yu, Sung Kyu Lim. 1-2 [doi]
• Mechanical Stress Effects on Dielectric Leakage and Interconnection Integrity in 3D NAND Flash MemorySehoon Lee, Jieun Lee, Sungpil Jang, Sujeong Kim, Choelgyu Kim, Narae Jeong Sae-Jin Kim, Jisoo Kang, Juhee Hong, Dong-Kyu Kim, Junhee Lim, Sejun Park, Seungwan Hong, Sunghoi Hur. 1-2 [doi]
• A 101mW, 280fps Scene Graph Generation Processor for Visual Context Understanding on Mobile DevicesChun-Wei Chang, I-Ting Lin, Chia-Hsiang Yang. 1-2 [doi]
• Co-Optimization for Robust Power Delivery Design in 3D-Heterogeneous Integration of Compute In-Memory AcceleratorsAnkit Kaul, Madison Manley, James Read, Yandong Luo, Xiaochen Peng, Shimeng Yu, Muhannad S. Bakir. 1-2 [doi]
• 2) Single-Crystalline Si on SiO2 by Elevated-EpiBo-Jheng Shih, Yu-Ming Pan, Hao-Tung Chung, Chieh-Ling Lee, I-Chun Hsieh, Nein-Chih Lin, Chih-Chao Yang, Po-Tsang Huang, Hung-Ming Chen, Chiao-Yen Wang, Huan-Yu Chiu, Huang-Chung Cheng, Chang-Hong Shen, Wen-Fa Wu, Tuo-Hung Hou, Kuan-Neng Chen, Chenming Hu. 1-2 [doi]
• Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and MemoryZ. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, M. Islam, J. Y. Lin, C. Sung, M. Hong, Daewon Ha, H. Wang, M. A. Alam, P. D. Ye. 1-2 [doi]
• A Smart Contact Lens System with 433MHz Wireless Power and Data Transfer at a Modulation Index Down to 0.02%Heesung Roh, Hyun Jin Yoo, Si-Youl Yoo, Seung Hee Pyen, Cheonhoo Jeon, Jae-Yoon Sim. 1-2 [doi]
• P-type SnO Semiconductor Transistor and ApplicationC.-C. Wang, C.-C. Kuo, C. H. Wu, A. Lu, H. Y. Lee, C.-F. Hsu, P.-J. Tzeng, T.-Y. Lee, F. R. Hou, M. H. Chang, S. C. Lai, K. Goto, Shimeng Yu, C. I. Wu, C.-T. Lin, Y. M. Lin, X. Y. Bao. 1-2 [doi]
• 2 Reconfigurable PUF Using 1T2R RRAM Switching Competition in 28nm CMOS with 5e-9 Bit Error RateYue Cao, Honghu Yang, Jianguo Yang, Qi Liu, Ming Liu. 1-2 [doi]
• Cell to Core-Periphery Overlap (C2O) Based on BCAT for Next Generation DRAMKiseok Lee, Hongjun Lee, Hyungeun Choi, Jeongsu Kim, Kyunghwan Kim, Moonyoung Jeong, Soohyun Bae, Hyebin Kim, Jiyun Lee, Minsoo Kim, Keunnam Kim, Huijung Kim, Sungmin Park, Taejin Park, Jin-Woo Han, Jeonghoon Oh, Yong Kwan Kim, Sungsoo Yim, Bongsoo Kim, Jemin Park, Jaihyuk Song. 1-2 [doi]
• Single-Power-Supply Compatible Cryogenic In0.8Ga0.2As Quantum-well HEMTs with Record Combination of high-frequency and low-noise performance for quantum-computins applicationsJ. H. Yoo, Y.-S. Jeon, S. W. Son, I.-G. Lee, H.-B. Jo, S.-M. Choi, M. S. Yu, W.-S. Park, H.-J. Kim, H. J. Lee, S.-P. Son, S.-K. Kim, J. Yun, J. P. Shim, H. Jang, K. Lee, Y. Jeong, T. Kim, C.-S. Shin, T. W. Kim, J. H. Lee, K.-S. Seo, K. Yang, D. H. Kim. 1-2 [doi]
• HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°CYusuke Shuto, Jun Okuno, Tsubasa Yonai, Ryo Ono, Peter Reinig, Maximilian Lederer, Konrad Seidel, Ruben Alcala, Thomas Mikolajick, Uwe Schroeder, Taku Umebayashi, Kentaro Akiyama. 1-2 [doi]
• 2 Current Density, 99.99% Current Efficiency, and 2.04 fs FoMJeongmyeong Kim, Changjoo Park, Wanyeong Jung. 1-2 [doi]
• A Temporal Noise Reduction via 40% Enhanced Conversion Gain in Dual-Pixel CMOS Image Sensor with Full-Depth Deep-Trench Isolation and Locally Lowered-Stack TechnologySeunghwan Lee, Jeongjin Cho, Shinyoung Choi, Sung Yoon Min, Eunjung Lee, Minji Jung, Kyoungmok Son, Hyunchaul Jeong, Heetak Han, Sachoun Park, Sanghyuck Moon, Seungki Jung, Junseok Yang, Taesub Jung, Howoo Park, Bumsuk Kim, Kyungho Lee, Jesuk Lee. 1-2 [doi]
• A 5GHz Fractional-N PLL with 97fsrms Jitter and -255.3dB FoMZhiqiang Huang, Fengjun Chen, Shuangfeng Kong. 1-2 [doi]
• Package - System Thermal Modeling and New MaterialTsung-Yu Chen, Kris Chuang, Wensen Hung, Tsung-Shu Lin, Yen-ming Chen. 1-2 [doi]
• 23, 000-Exposures/s 360fps-Readout Software-Defined Image Sensor with Motion-Adaptive Spatially Varying Imaging SpeedRoberto Rangel, Xiaonong Sun, Ayandev Barman, Rahul Gulve, Savo Bajic, Jingmin Wang, Harry Wang, David B. Lindell, Kiriakos N. Kutulakos, Roman Genov. 1-2 [doi]
• A 28GHz 5G NR Wirelessly Powered Relay Transceiver Using Rectifier-Type 4th-Order Sub-Harmonic MixerSena Kato, Shu Date, Tao Ruoxin, Yasuto Narukiyo, Hiroki Hayashi, Keito Yuasa, Michihiro Ide, Takashi Tomura, Kenichi Okada, Atsushi Shirane. 1-2 [doi]
• A 22nm Nonvolatile AI-Edge Processor with 21.4TFLOPS/W using 47.25Mb Lossless-Compressed-Computing STT-MRAM Near-Memory-Compute MacroDe-Qi You, Win-San Khwa, Jui-Jen Wu, Chuan-Jia Jhang, Guan-Yi Lin, Po-Jung Chen, Ting-Chien Chiu, Fang-yi Chen, Andrew Lee, Yu-Cheng Hung, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang. 1-2 [doi]
• Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying MechanismDong Zhang, Yang Feng, Zijie Zheng, Chen Sun, Qiwen Kong, Gan Liu, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong. 1-2 [doi]
• A 5.6µW 10-Keyword End-to-End Keyword Spotting System Using Passive-Averaging SAR ADC and Sign-Exponent-Only Layer Fusion with 92.7% AccuracySungjin Park, Kwanghyun Shin, Dongkwon Lee, Minyoung Kang, SunWoo Lee, Youngmin Park, Mingoo Seok, Dongsuk Jeon. 1-2 [doi]
• A 0.29pJ/Step Fully Discrete-Time Charge Domain Bridge-to-Digital Converter for Force Sensing in Spinal Implants Using RC BridgeTim Keller, Rosario M. Incandela, Xi Chen, Hesam Ghiasi, Mohsen Khodaee, Sina Arjmandpour, Jiawei Liao, H. Long, Tobias Götschi, Jonas Widmer, Taekwang Jang. 1-2 [doi]
• 2 Die-to-Die Link in 5nm/6nm FinFET on a 9μm-Pitch 3D Package Achieving 10.24Tb/s Bandwidth at 16Gb/s PAM-4Mu-Shan Lin, Chien-Chun Tsai, Shenggao Li, Tze-Chiang Huang, Wen-Hung Huang, Kate Huang, Yu-Chi Chen, Alex Liu, Yu-Jie Huang, Jimmy Wang, Shu-Chun Yang, Nai-Chen Cheng 0001, Chao-Chieh Li, Hsin-Hung Kuo, Wei-Chih Chen, Chin-Hua Wen, Kevin Lin, Po-Yi Huang, Kenny Cheng-Hsiang Hsieh, Frank Lee. 1-2 [doi]
• A 22nm 54.94TFLOPS/W Transformer Fine-Tuning Processor with Exponent-Stationary Re-Computing, Aggressive Linear Fitting, and Logarithmic Domain MultiplicatingYang Wang 0089, Xiaolong Yang, Yubin Qin, Zhiren Zhao, Ruiqi Guo, Zhiheng Yue, Huiming Han, Shaojun Wei, Yang Hu 0001, Shouyi Yin. 1-2 [doi]
• A Pulsed Electrochemistry Readout IC with Slew-rate Booting Technique and Phase-domain ΔΣ ADC for Si-Nanowire Electrical Double-layer Capacitance MeasurementPo-Hsun Chu, Cheng-Tse Tsai, Yu-Siang Chou, Nitish Kumar, Shu-Ping Lin, Yu-Te Liao. 1-2 [doi]
• A Wireless Neurostimulator Using Body-Coupled Link for Multisite Stimulation in Freely Behaving AnimalsTaejune Jeon, Byeongseol Kim, Changuk Lee, Danbi Ahn, Daerl Park, Jaesuk Sung, Hee Young Kim, Heonjin Choi, Joonsung Bae, Youngcheol Chae. 1-2 [doi]
• Reliable Low-Voltage FeRAM Capacitors for High-Speed Dense Embedded Memory in Advanced CMOSS.-C. Chang, C. Neumann, B. Granados Alpizar, S. Atanasov, J. Peck, N. Kabir, Y. C. Liao, S. Shivaraman, Wriddhi Chakraborty, N. Haratipour, I-Cheng Tung, V. Nikitin, G. Allen, T. Hoff, A. Oni, T. Tronic, A. Roy, H. Li, F. Hamzaoglu, M. Metz, I. Young, J. Kavalieros, U. Avci. 1-2 [doi]
• A 28GHz 4-Stream Time-Division MIMO Phased-Array Receiver Utilizing Nyquist-Rate Fast Beam Switching for 5G and BeyondYi Zhang 0092, Minzhe Tang, Jian Pang, Zheng Li 0021, Dongfan Xu, Dingxin Xu, Yuncheng Zhang, Kazuaki Kunihiro, Hiroyuki Sakai 0009, Atsushi Shirane, Kenichi Okada. 1-2 [doi]
• First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM DevicesM. G. Gottwald, Guohan Hu, Philip Louis Trouilloud, L. Rehm, C. Safranski, G. Kim, S. L. Brown, J. Bruley, C. P. D'Emic, O. Gunawan, H. Jung, C. Lavoie, J. Lee, J. Liang, M. Robbins, J. Z. Sun, P. Hashemi, Daniel Christopher Worledge. 1-2 [doi]
• A Highly-Integrated 1536-Channel Quad-Shank Monolithic Neural Probe in 55nm CMOS for Full-Band Raw-Signal RecordingXiaolin Yang, Joan Aymerich, Philippe Coppejans, Wen-Yang Hsu, Chutham Sawigun, Jose Cisneros-Fernández, Andrea Lodi 0003, Maribel Caceres Rivera, Bernardo Tacca, Matt McDonald, Hasan Mahmud-UI, Barundeb Dutta, Jan Putzeys, Carolina Mora Lopez. 1-2 [doi]
• A 100kHz-BW 99dB-DR Continuous-Time Tracking-Zoom Incremental ADC with Residue-Gain Switching and Digital NC-FFYe-Dam Kim, Jae-Hyun Chung, Kent Edrian Lozada, Chang-Un Park, Kun-Woo Park, Kwan-Hoon Song, Young-Hun Moon, Min-Jae Seo, Seung-Tak Ryu. 1-2 [doi]
• A 71.5-dB SNDR 475-MS/s Ringamp-Based Pipelined SAR ADC with On-Chip Bit-Weight CalibrationChao Chen, Zhu Yuan, Peng Cao, Jiawei Xu, Zhiliang Hong. 1-2 [doi]
• A 10GS/s Hierarchical Time-Interleaved ADC for RF-Sampling ApplicationsNereo Markulic, Johan Nguyen, Jorge Luis Lagos-Benites, Ewout Martens, Jan Craninckx. 1-2 [doi]
• SPIRIT: A Seizure Prediction SoC with a 17.2nJ/cls Unsupervised Online-Learning Classifier and Zoom Analog FrontendsAdelson Chua, Aviral Pandey, Ryan Kaveh, Sina Faraji Alamouti, Justin Doong, Rikky Muller. 1-2 [doi]
• 2 Stackable Polysilicon Channel Access Device for Ultra-Dense NVDRAMA. Liao, M. Jerry, K. Karda, Matthew Hollander, P. Sharma, R. Ge, T. Zhao, G. K. El Hajjam, M. Mariani, M. Calabrese, D. Raimondi, A. Rigano, T. Rossi, K. Florent, N. Tapias, C. Jacob, Alessandro Calderoni, S. Chhajed, J. Zahurak, Nirmal Ramaswamy. 1-3 [doi]
• An OLED Display Driver IC Embedding -63dB CMR, 80mV/nA Sensitivity, 390pA Detectable, and Column-Parallel Pixel Current Readout for Real-Time Non-Uniformity CompensationGyu-Wan Lim, Gyeong-Gu Kang, Seunghwa Shin, Kihyun Kim, Yousung Park, Won Kim, Young Bok Kim, Hyun-Kyu Jeon, Hyun-Sik Kim. 1-2 [doi]
• Single Metal BCAT Breakthrough to Open a New Era of 12 nm DRAM and BeyondKyosuk Chae, Taiuk Rim, Youngwoo Son, Heejae Choi, Jin-Seong Lee, Shinwoo Jeong, Jieun Lee, Dongin Lee, ByungHyun Lee, Dongsoo Woo, Seguen Park, Sangjun Hwang. 1-2 [doi]
• BEOL Compatible Ultra-Low Operating Voltage (0.5 V) and Preconfigured Switching Polarization States in Effective 3 nm Ferroelectric HZO CapacitorsMinjong Lee, Jin Hyun Kim, Dan N. Le, Seojun Lee, Si-Un Song, Rino Choi, Youngbae Ahn, Seung Wook Ryu, Pil-Ryung Cha, Chang-Yong Nam, Seongbin Park, Jongmug Kang, Si Joon Kim, Jiyoung Kim. 1-2 [doi]
• A 3.3GHz 1024X640 Multi-Bank Single-Port SRAM with Frequency Enhancing Techniques and 0.55V-1.35V Wide Voltage Range Operation in 3nm FinFET for HPC ApplicationsMing-Chieh Huang, Wei Wing Mar, Shankar Kanade, Boris Bai, Aditya Gayatri, Krishna Khairnar, Amy Lai, Yu-Hao Hsu, Hung-Jen Liao, Yih Wang, Tsung-Yung Jonathan Chang. 1-2 [doi]
• Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77K to 375KXuanqi Chen, Gan Liu, Wei Shi, Yuye Kang, Qiwen Kong, Yuxuan Wang, Rui Shao, Bich-Yen Nguyen, Gengchiau Liang, Kaizhen Han, Xiao Gong. 1-2 [doi]
• A Digital Dynamic Vision Sensor with SPAD Pixels and Multi-Event Generation for Motion/Vibration-Adaptive DetectionJinpyo Han, Houk Lee, Junhee Cho, Heesung Lee, Seong-Jin Kim, Jung-Hoon Chun, Jaehyuk Choi 0001. 1-2 [doi]
• A 12-bit 10GS/s Time-Interleaved SAR ADC with Even/Odd Channel-Correlated Absolute Error-Based Over-Nyquist Timing-Skew Calibration in 5nm FinFETJunsang Park, Jinwoo Park, Jaemin Hong, Sun-Jae Park, Dongsuk Lee, Sungno Lee, Hyochul Shin, Kyung-Hoon Lee, Byeongwoo Koo, Youngjae Cho, Michael Choi, Jongshin Shin. 1-2 [doi]
• A 450µW@50fps Wake-Up Module Featuring Auto-Bracketed 3-Scale Log-Corrected Pattern Recognition and Motion Detection in a 1.5Mpix 8T Global Shutter ImagerArnaud Verdant, William Guicquero, David Coriat, Guillaume Moritz, Nicolas Royer, Sébastien Thuries, Anais Mollard, Vincent Teil, Yann Desprez, Gilles Monnot, Pierre Malinge, Bruno Paille, Guillaume Caubit, Arnaud Bourge, Laurent Tardif, Stephanie Bigault, Jérôme Chossat. 1-2 [doi]
• 3DIC System-Technology Co-Optimization with a Focus on the Interplay of Thermal, Power, Timing, and Stress EffectsVictor Moroz, Xiaopeng Xu, Alexei Svizhenko, Xi-Wei Lin, Sergey Popov, Henry Sheng, Kenneth Larsen. 1-2 [doi]
• A 12V-to-1V 100A Inverted Pyramid Trans-Inductor Voltage Regulator Converter with 93.6% High Efficiency and Fast Transient ResponseYu-Chen Kuo, Hong-Teng Wu, Guan-Ye Chen, Ke-Horng Chen, Kuo-Lin Zheng, Chih-Chen Li. 1-2 [doi]
• Overcoming Performance Limitation of IGZO FET by iCVD Fluorine DopingSeung-Hyun Oh, Changhyeon Lee, Hee Tae Kim, Jeong Ik Park, Min-Ju Kim, Se-Jun Park, Sung Gap Im, Sung Haeng Cho, Byung Jin Cho. 1-2 [doi]
• A -96.5 dBm-Sensitivity, 14 dBm Peak Power, Self-Interference Resistant IR-UWB Radar Transceiver Supporting Child Presence Detection and Precision PositioningHyun-Gi Seok, Wan Kim, Sinyoung Kim, Jae-Keun Lee, Chanho Kim, Chanbin Ko, Junseong Park, Wonkang Kim, Jongpil Cho, Seungyong Bae, Youngsea Cho, Wonjun Jung, Junhyeong Kim, Sumin Kang, Hyeokju Na, Byoungjoong Kang, Honggul Han, Hoon Kang, Minki Ahn, Chiyoung Ahn, Sukjin Jung, Hyukjun Sung, Seunghyun Oh, Jae-Eun Lee, Jongwoo Lee, Joonsuk Kim. 1-2 [doi]
• Making Sense at the EdgeAhmad Bahai. 1-2 [doi]
• Highly manufacturable Self-Aigned Direct Backside Contact (SA-DBC) and Backside Gate Contact (BGC) for 3-dimensional Stacked FET at 48nm gate pitchJaehyun Park, Juhun Park, Kyuman Hwang, Jinchan Yun, Dahye Kim, Sungil Park, Jejune Park, JinWook Yang, Jae-Won Jeong, Chuljin Yun, Jinho Bae, Sam Park, Daihong Huh, SangHyeon Kim, Seungeun Baek, Suk Yang, Inhae Zoh, Junghan Lee, Tae-Sun Kim, Younsu Ha, Sun-Jung Lee, Sang Wuk Park, Bong Jin Kuh, Daewon Ha, Sangjin Hyun, Sujin Ahn, Jaihyuk Song. 1-2 [doi]
• A Single-Channel, 1-GS/s, 10.91-ENOB, 81-dB SFDR, 9.2-fJ/conv.-step, Ringamp-Based Pipelined ADC with Background Calibration in 16nm CMOSJorge Lagos 0001, Pratap Tumkur Renukaswamy, Nereo Markulic, Ewout Martens, Jan Craninckx. 1-2 [doi]
• Assessment of the Transient Self-Heating Effect and its Impact on the Performance of Watt-Level RF Power Amplifier in a FinFET TechnologyT. V. Dinh, S.-W. Tam, A. J. Scholten, L. Tondelli, R. M. T. Pijper, S. H. Kondapalli, J. Xie, A. Wong, I. To, R. Asanovski, L. Selmi. 1-2 [doi]
• A Monolithic Low-ILEAK Cross-Coupled GaN Driver with ΔΦ-Reduced EMI-Rejecter for 21.51dBµV-EMI-Reduction and 1/10x filter-capacitorHsing-Yen Tsai, Shi-Jun Zeng, Yu-Teng Liang, Ke-Horng Chen, Kuo-Lin Zheng, Chih-Chen Li. 1-2 [doi]
• Positive Bias Stress Measurement Guideline and Band Analysis for Evaluating Instability of Oxide Semiconductor TransistorsQi Jiang, Koustav Jana, Kasidit Toprasertpong, Shuhan Liu, H.-S. Philip Wong. 1-2 [doi]
• Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked ContactsSteven Demuynck, Victor Vega-Gonzalez, C. Toledo de Carvalho Cavalcante, L. Petersen Barbosa Lima, K. Stiers, C. Sheng, A. Vandooren, M. Hosseini, X. Zhou, Hans Mertens, Thomas Chiarella, Jürgen Bömmels, Roger Loo, E. Rosseel, Clement Porret, Y. Shimura, A. Akula, G. Mannaert, S. Choudhury, V. Brissonneau, E. Dupuy, T. Sarkar, Nathali Franchina-Vergel, A. Peter, N. Jourdan, J. P. Soulie, Kevin Vandersmissen, F. Sebaai, P. Puttarame Gowda, K. Lai, A. Mingardi, S. Sumar Sarkar, K. D'Have, B. T. Chan, A. Sepulveda Marquez, R. Langer, I. Gyo Koo, E. Altamirano Sanchez, Katia Devriendt, P. Rincon Delgadillo, F. Lazzarino, Jérôme Mitard, J. Geypen, E. Grieten, D. Batuk, Y.-F. Chen, F. Verbeek, F. Holsteyns, S. Subramanian, N. Horiguchi, S. Biesemans. 1-2 [doi]
• NeRF-Navi: A 93.6-202.9µJ/task Switchable Approximate-Accurate NeRF Path Planning Processor with Dual Attention Engine and Outlier Bit-Offloading CoreSeryeong Kim, Seokchan Song, Wonhoon Park, Junha Ryu, Sangyeob Kim, Gwangtae Park, Soyeon Kim, Hoi-Jun Yoo. 1-2 [doi]
• Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/Reliability Tradeoff for High Performance Oxide TFTsJiayi Wang, Ziheng Bai, Kuo Zhang, Zhicheng Wu, Di Geng, Yang Xu, Nannan You, Yuxuan Li, Guanhua Yang, Ling Li, Shengkai Wang, Ming Liu. 1-2 [doi]
• First Demonstration of BEOL-Compatible 3D Vertical FeNORYang Feng, Dong Zhang, Chen Sun 0010, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni 0004, Jixuan Wu, Jiezhi Chen, Xiao Gong. 1-2 [doi]
• First Heterogeneous and Monolithic 3D (HM3D) Integration of InGaAs HEMTs and InP/InGaAs DHBTs on Si CMOS for Next-Generation Wireless CommunicationNahyun Rheem, JaeYong Jeong, Yoon-Je Suh, Chan Jik Lee, Bong-Ho Kim, Joon Pyo Kim, Seong Kwang Kim, Hyeongrak Lim, Jongmin Kim, Dae-Hwan Ahn, Jae Hoon Han, Jongwon Lee, SangHyeon Kim. 1-2 [doi]
• A 76×55 X-Ray Energy Binning Dosimeter for Closed-Loop Cancer RadiotherapyRahul Lall, Kyoungtae Lee, Adam Cunha, Rebecca Abergel, Youngho Seo, Ali M. Niknejad, Mekhail Anwar. 1-2 [doi]
• Medusa: A 0.83/4.6μJ/Frame 86/91.6%-CIFAR-10 TinyML Processor with Pipelined Pixel Streaming of Bottleneck Layers in 28nm CMOSRohan Doshi, Massimo Giordano, Justin Olah, Zhidong Cao, Moon Hyung Jang, Luke R. Upton, Athanasios Ramkaj, Boris Murmann. 1-2 [doi]
• A 3.2GHz-15GHz Low Jitter Resonant Clock Featuring Rotary Traveling Wave Oscillators in Intel 4 CMOS for 3D Heterogeneous Multi-Die SystemsVinayak Honkote, Ragh Kuttappa, Jainaveen Sundaram, Satish Yada, Chinnusamy Kalimuthu, Juhi Patil, Richard Lee, Cristan Paulino, Paolo A. Aseron, Trang Nguyen, Amreesh Rao, Dileep Kurian, Mingming Xu, Yan Song, Tanay Karnik, Anuradha Srinivasan, Vivek De. 1-2 [doi]
• A 10.8GS/s, 84MHz-BW RF Bandpass ΣΔ ADC with a 89dB-SFDR and a 62dB-SNDR for LTE/5G ReceiversA. Sayed, Michel Vasilevski, M. T. Abdelmomen, Shadi Turk, Ahmed A. Ghoniem, C. Perez, C. Voillequin, Haralampos-G. Stratigopoulos, Marie-Minerve Louërat, E. Wantiez, Hassan Aboushady. 1-2 [doi]
• Mitigating Line-Break Defectivity with a Sandwiched TiN or W Layer for Metal Pitch 18 NM Aspect Ratio 6 Semi-Damascene InterconnectsAnshul Gupta, Shreya Kundu, Stefan Decoster, K. Sah, G. Delie, B. Truijen, Davide Tierno, Giulio Marti, O. Varela Pedreira, B. Kenens, Y. Hermans, C. Adelmann, B. de Wachter, Ivan Ciofi, G. Murdoch, A. Cross, Seongho Park, Zsolt Tokei. 1-2 [doi]
• An On-Chip Current-Sink-Free Adaptive-Timing Power Impedance Measurement (PIM) Unit for 3D-IC in 5nm FinFET TechnologyTsung-Che Lu, Chin-Ming Fu, Wei-Hsiang Wang, Fred Kuo, Chih-Hsien Chang, Kenny Hsieh, King Ho Tam, Tze-Chiang Huang, Tom Chen 0002, Mei Wong, Wei-pin Changchien, Frank Lee. 1-2 [doi]
• Ge(110) GAA Nanosheet / Si(100) Tri-gate Nanosheet Monolithic CFETs Featuring Record-High Hole MobilitySeong Kwang Kim, Hyeongrak Lim, JaeYong Jeong, Young-Keun Park, Jejune Park, Sungil Park, Jaehyun Park, Daewon Ha, Byung Jin Cho, SangHyeon Kim. 1-2 [doi]
• 2 10MHz Buck IVR Chiplet in 55nm BCD Featuring Self-Timed Bootstrap and Same-Cycle ZVS ControlSally Amin, Harish Krishnamurthy, Huong Do, Claudio Alvarez, Mike Hill, Kaladhar Radhakrishnan, Vivek De, Sheldon Weng, Krishnan Ravichandran, Jim Tschanz, Wilfred Gomes, Jonathan Douglas. 1-2 [doi]
• 2 Active Area in 12nm FinFETQiaochu Zhang, Shiyu Su, Baishakhi Rani Biswas, Sandeep Gupta 0001, Mike Shuo-Wei Chen. 1-2 [doi]
• Backside Power Delivery with relaxed overlay for backside patterning using extreme wafer thinning and Molybdenum-filled slit nano Through Silicon ViasP. Zhao, Liesbeth Witters, Anne Jourdain, Michele Stucchi, N. Jourdan, J. W. Maes, H. Bana, C. Zhu, R. Chukka, F. Sebaai, Kevin Vandersmissen, N. Heylen, D. Montero, S. Wang, K. D'Have, F. Schleicher, J. De Vos, Gerald Beyer, A. Miller, Eric Beyne. 1-2 [doi]
• A 2x112 Gb/s 0.34 pJ/b/Lane Single-Ended PAM4 Receiver with Multi-Order Crosstalk Cancellation and Signal Reutilization Technique in 28-nm CMOSLiping Zhong, Yangyi Zhang, Xiongshi Luo, Hongzhi Wu, Xuxu Cheng, Weitao Wu, Zhenghao Li, Quan Pan 0002. 1-2 [doi]
• A 140-Gbps 1-to-21-GHz Ultra-Wideband LNA Achieving 1.95-to-3-dB NF Using Gm-Assisted-Feedback Noise Suppression Technique in 40nm Bulk CMOSSicheng Han, Yun Wang, Yunhao Li, Wen Zuo, Wei Li, Yue Lin, Hongtao Xu. 1-2 [doi]
• A Quad-Core AI Processing Unit for Generative AI in 4nm 5G Smartphone SoCChien-Hung Lin, Jeng-Yun Hsu, Cheng-Ying Yu, Chia-Wei Hsu, Yi-Min Tsai, Kuo-Sheng Wu, Chung-Lun Huang, Meng-Han Hsieh, Tsung-Yao Lin. 1-2 [doi]
• Backside Power Delivery in High Density and High Performance Context: IR-Drop and Block-Level Power-Performance-Area BenefitsYun Zhou, S. C. Song, Halil Kükner, Giuliano Sisto, Sheng Yang, Anita Farokhnejad, Mohamed Naeim, Moritz Brunion, Ji-Yung Lin, Odysseas Zografos, Pieter Weckx, Shashank Ekbote, Nick Stevens-Yu, David Greenlaw, Steve Molloy, Geert Hellings, Julien Ryckaert. 1-2 [doi]
• Highly Scalable Vertical Bypass RRAM (VB-RRAM) for 3D V -NAND MemoryGeonhui Han, Youngdong Kim, Jaeseon Kim, Dongmin Kim, Yoori Seo, Chuljun Lee, Jinmyung Choi, Jinwoo Lee, Dongho Ahn, Sechung Oh, Donghwa Lee, Hyunsang Hwang. 1-2 [doi]
• A 278-514M Event/s ADC-Less Stochastic Compute-In-Memory Convolution Accelerator for Event CameraJiyue Yang, Alexander Graening, Wojciech Romaszkan, Vinod K. Jacob, Puneet Gupta 0001, Sudhakar Pamarti. 1-2 [doi]
• A Dual-Gate Vertical Channel IGZO Transistor for BEOL Stackable 3D Parallel Integration for Memory and Computing ApplicationsZiyi Liu, Yiwei Du, Renrong Liang, Zhigang Zhang, Liyang Pan, Jianshi Tang, Renrong Liang, Bin Gao 0006, Qi Hu, Jun Xu, He Qian, Huaqiang Wu, Yuegang Zhang. 1-2 [doi]
• Up to 57% Reduction in Effective Resistivity of Word Lines of 3D-NAND Memory by Grain-Size Control, Material Selection, and Seam RemovalH. Terada, K. Yamaguchi, T. Yokoi, T. Sameshima, K. Suzuki, G. Nakamura, H. Nagai. 1-2 [doi]
• A Novel Phase Change Material RF Switch with 16nm Technology to Achieve Low Voltage and Low Ron*Coff for mmWaveH. J. Li, K. P. Chang, C. E. Chen, W. T. Hsieh, H. H. Kuo, C.-C. Huang, H. C. Chen, Z. H. Ya, H. Y. Chen, J. D. Jin, S.-H. Yang, Y. W. Ting, K. C. Tseng, K. C. Huang, Harry Chuang. 1-2 [doi]
• First Observation of Time Exponent Variations under Positive bias Stress on a-IGZO Transistors Utilizing Ultrafast On-the-Fly Technique with 1 μs DelayTaewon Seo, Changeon Jin, Yoonyoung Chung. 1-2 [doi]
• A 92.8% Power Reduction Event-Driven Dual-Mode Touch Analog Front-End IC Featuring 620μW Self-Capacitance Sensing and 500fps Mutual-Capacitance SensingJonghang Choi, Ingu Jeong, Seok Won Jung, Jun-Eun Park. 1-2 [doi]
• 2 2RW Pseudo Dual-Port 6T SRAM with High-R Wire Tracking and Sequential Access Aware Dynamic Power ReductionTomotaka Tanaka, Yuichiro Ishii, Makoto Yabuuchi, Yumito Aoyagi, Masaya Hamada, Kazuto Mizutani, Koji Nii, Hidehiro Fujiwara, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang. 1-2 [doi]
• A ±100A Auto-Calibration Current Sensor with 80V Pulse-Width Modulation Attenuation and 0.15% Gain ErrorYu-Teng Liang, Shi-Jun Zeng, Yu-Tse Shih, Ke-Horng Chen, Kuo-Lin Zheng, Chih-Chen Li. 1-2 [doi]
• A Metal Dual Work-Function Gate (MDWG) for the Continuous Scaling of DRAM Cell TransistorsJunsoo Kim, Hyun Jung Lee, Sung-Ho Jang, Jun Bum Lee, Ilgweon Kim, Jeonghoon Oh, Jemin Park, Jaihyuk Song. 1-2 [doi]
• An In-Sensor PUF Featuring Optical Reconfigurability and Near-100% Hardware Reuse Ratio for Trustworthy SensingHaibiao Zuo, Xiaoliang Huang, Shiqiao Zhang, Chip-Hong Chang, Xiaojin Zhao. 1-2 [doi]
• Bit-Cost-Scalable 3D DRAM Architecture and Unit Cell First Demonstrated with Integrated Gate-Around and Channel-Around IGZO FETsFeng-Min Lee, Po-Hao Tseng, Yu-Yu Lin, Yu-Hsuan Lin, Wei-Lun Weng, Nei-Chih Lin, Po-Jung Sung, Chien-Ting Wu, Chih-Chao Yang, Wen-Fa Wu, Chang-Hong Shen, Tuo-Hung Hou, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu. 1-2 [doi]
• A 0.8V Capacitively-Biased BJT-Based Temperature Sensor with an Inaccuracy of ±0.4°C (3σ) from -40°C to 125°C in 22nm CMOSZhong Tang, Haining Wang, Xiaopeng Yu, Kofi A. A. Makinwa, Nianxiong Nick Tan. 1-2 [doi]
• EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device IntegrationS. Ghosh, A. Kruv, Quentin Smets, Tom Schram, D. J. Leech, T. Ding, V. Turkani, Benjamin Groven, A. Dangel, G. Probst, Thomas Uhrmann, Markus Wimplinger, Inge Asselberghs, Cesar J. Lockhart de la Rosa, Steven Brems, Gouri Sankar Kar. 1-2 [doi]
• High Thermal Conductivity AlN Films for Advanced 3D ChipletsT. Takagi, T. Ninomiya, M. Niwa, S. Obara, T. Momose, Y. Shimogaki, M. Nomura, H. Fujioka, M. Mori, T. Kuroda. 1-2 [doi]
• An Offset-Compensated Charge-Transfer Pre-Sensing Bit-Line Sense-Amplifier for Low-Voltage DRAMKyeongtae Nam, Jaehyuk Kim, Dongil Lee, Kyuchang Kang, Sangyun Kim, Changyoung Lee, Hyunchul Yoon, Donggeon Kim, Bokyeon Won, Jaejoon Song, Incheol Nam, Young Hun Seo, Jeong-Don Ihm, Changsik Yoo, Sangjoon Hwang. 1-2 [doi]
• First Demonstration of Superconducting Nb Contact on Heavily-Doped Group IV SemiconductorGerui Zheng, Enze Zhang, Rami Khazaka, Kaizhen Han, Haiwen Xu, Yuxuan Wang, Hyunsoo Yang, Xiao Gong. 1-2 [doi]
• First Demonstration of Monolithic Three-Dimensional Integration of Ultra-High Density Hybrid IGZO/Si SRAM and IGZO 2T0C DRAM Achieving Record-Low Latency (5000s)Menggan Liu, Zhi Li, Wendong Lu, Kaifei Chen, Jiebin Niu, Fuxi Liao, Zijing Wu, Congyan Lu, Weizeng Li, Di Geng, Nianduan Lu, Chunmeng Dou, Guanhua Yang, Ling Li, Ming Liu 0022. 1-2 [doi]
• A 97dB-PSRR 178.4dB-FOMDR Calibration-Free VCO-ΔΣ ADC Using a PVT-Insensitive Frequency-Locked Differential Regulation Scheme for Multi-Channel ExG AcquisitionSehwan Lee, Taeryoung Seol, Geunha Kim, Minyoung Song, Gain Kim, Jong-Hyeok Yoon, Arup K. George, Junghyup Lee. 1-2 [doi]
• A 1.5 V 132 dBSPL AOP Digital Readout Circuit for MEMS Microphone Using Self-Adaption LoopLing Wang, Longjie Zhong, Zhangming Zhu. 1-2 [doi]
• CogniVision: End-to-End SoC for Always-on Smart Vision with mW Power in 40nmAnimesh Gupta, Japesh Vohra, Massimo Alioto. 1-2 [doi]
• Monolithic 3D Integration of Analog RRAM-Based Fully Weight Stationary and Novel CFET 2T0C-Based Partially Weight Stationary for Accelerating TransformerH. Yang, Y. Li, J. Tang, R. An, Y. Zhang, L. Gao, N. Gao, H. Xu, Y. Du, Z. Liu, X. Ma, G. Wang, C. Zhao, J. Xiang, J. Zhao, W. Bu, K. Zheng, J. Kang, B. Gao, H. Qian, H. Wu. 1-2 [doi]
• Dyamond: A 1T1C DRAM In-memory Computing Accelerator with Compact MAC-SIMD and Adaptive Column Addition DataflowSeongyon Hong, Wooyoung Jo, Sangjin Kim, Sangyeob Kim, Kyomin Sohn, Hoi-Jun Yoo. 1-2 [doi]
• Integration of Si-Interposer and High Density MIM Capacitor on 2.5D Foveros Face-to-Face ArchitectureChristopher Pelto, R. Aggarwal, R. Ahan, M. Armstrong, M. Bebek, M. Blount, S. Chowdhury, J. Chuah, C. Connor, T. DeBonis, B. Dhayal, A. Dougless, S. Gokhale, A. Jain, V. Javvaji, K. Kamisetty, G. Kim, J. Kpetehoto, C. Kuan, C. Lin, G. Liu, Y. Ma, G. McPherson, S. Mokler, Christopher Perini, R. Ramaswamy, Bernhard Sell, R. Subramaniam, James Waldemer, D. Wei, Y. Yang, Y. Yang, J. Yaung, B. Sabi, S. Natarajan. 1-2 [doi]
• A 470μW, 102.6dB-DR, 20kHz BW Calibration-Free ΔΣ Modulator with SFDR in Excess of 110dBc using an Intrinsically Linear 13-Level DACMatteo Dalla Longa, Francesco Conzatti, Omar Ismail, John G. Kauffman, Maurits Ortmanns. 1-2 [doi]
• A-IGZO FETs with High Current and Remarkable Stability for Vertical Channel Transistor(VCT) / 3D DRAM ApplicationsJee-Eun Yang, Younjin Jang, Narae Han, Ha-Jun Sung, Jung-Kyun Kim, Youngkwan Cha, Kwang Hee Lee, Kyooho Jung, Moonil Jung, Wonsok Lee, Min-Hee Cho, Sangwook Kim. 1-2 [doi]
• A 3072-Channel Neural Readout IC with Multiplexed Two-Step Incremental-SAR Conversion and Bulk-DAC-Based EDO Compensation in 22nm FDSOIXiaohua Huang, Xiaolin Yang, Andrea Lodi 0003, Chris Van Hoof, Georges G. E. Gielen, Carolina Mora Lopez. 1-2 [doi]
• A New Industry Standard Compact Model Integrating TCAD Into SPICESanghoon Myung, Donggwan Shin, Kyeyeop Kim, Yunji Choi, Gijae Kang, Songyi Han, Jaehoon Jeong, Daesin Kim. 1-2 [doi]
• A Mixed-signal 3D Footstep Planning SoC for Motion Control of Humanoid Robots with Embedded Zero-Moment-Point based Gait Scheduler and Neural Inverse KinematicsQiankai Cao, Juin Chuen Oh, Jie Gu 0001. 1-2 [doi]
• A Current-Source-Free Constant-Current Wireless Adiabatic Neural Stimulator Achieving a 5.5-27.7x Improved RF-to-Electrode Stimulation Efficiency FactorSiddharth Agarwal, Gaël Pillonnet, Hongyu Lu, Nader Sherif Kassem Fathy, Patrick P. Mercier. 1-2 [doi]
• Backside Power Distribution for Nanosheet Technologies Beyond 2nmRuilong Xie, Wonhyuk Hong, Chen Zhang, Jongjin Lee, Kevin Brew, Richard Johnson, Nicholas A. Lanzillo, Hosadurga Shobha, Taesun Kim, Panjae Park, Shogo Mochizuki, Iqbal Saraf, Chanro Park, Lei Zhuang, Clifford Osborn, Wai Kin Li, Feng Liu, Muthumanickam Sankarapandian, Chung Ju Yang, Juntao Li, Lukas Tierney, Ruturaj Pujari, Yasir Sulehria, Yuncheng Song, Huimei Zhou, Miaomiao Wang 0006, Michael Belyansky, Somnath Ghosh, Haojun Zhang, Koichi Motoyama, Debarghya Sarkar, Wukang Kim, Albert Chu, Tao Li, Fabio Carta, Oleg Gluschenkov, Joongsuk Oh, Matthew Malley, Pinlei Chu, Son Nguyen, Katherine Luedders, Joe Lee, Shahrukh Khan, Prabudhya Roy Chowdhury, Huai Huang, Abir Shadman, Stuart Sieg, Daniel Dechene, Daniel Edelstein, John Arnold, Tenko Yamashita, Kisik Choi, Kang-ill Seo, Dechao Guo, Huiming Bu. 1-2 [doi]
• 2 32kHz Crystal Oscillator with Adaptive Sub-Harmonic Pulse Injection from -40°C to 125°C in 22nm FDSOIYingJie Zhu, Yiqing Lan, Humiao Li, Haoran Lyu, Zhen Kong, Jian Zhao 0004, Yida Li, Guoxing Wang, Jiamin Li, Longyang Lin. 1-2 [doi]
• Revealing Mechanism of Non-Accumulative Disturb and Approach Toward Disturb Suppression in HZO/Si FeFET MemoryM. Otomo, Kasidit Toprasertpong, Z. Cai, Z. Liu, Mitsuru Takenaka, S. Takagi. 1-2 [doi]
• 2 91% Peak Efficiency Scalable Multi-Stage Modular Switched Capacitor Voltage Regulator with Self-Timed Deadtime and Safe Startup for 3D-ICsJingshu Yu, Xiaosen Liu, Minxiang Gong, Nicolas Butzen, Sheldon Weng, Harish K. Krishnamurthy, Krishnan Ravichandran, Ramez Hosseinian Ahangharnejhad, Waldemer Jim, Christopher Pelto, James W. Tschanz, Vivek De. 1-2 [doi]
• A 97.3dB SNR Bioimpedance AFE with -84dB THD Segmented-ΔΣM Sinusoidal Current Generator and Passing-Through Instrumentation AmplifierQinjing Pan, Qi Luo, Tianxiang Qu, Liheng Liu, Xiao Li, Min Chen, Zhiliang Hong, Jiawei Xu. 1-2 [doi]
• Demonstration of Logic-Block Performance-Power Gain by 1st Generation Back Side Power Delivery Network for SoC and HPC Applications Beyond 2nm NodeH. Fukutome, J. Kim, J. Shin, J. Kim, Y. Lee, Y. Park, D. Oh, S. Chae, B. Eom, YS Nam, M. Lee, S. Ha, EG Chung, J. Kim, M. Jo, SH Lee, S. Kim, KH Cho, KW Lee, DW Kim, HJ Cho, K. Rim, SD Kwon, J. Song. 1-2 [doi]
• First Experimental Demonstration of Hybrid Gain Cell Memory with Si PMOS and ITO FET for High-speed On-chip MemoryShuhan Liu, Shengjun Qin, Koustav Jana, Jian Chen, Kasidit Toprasertpong, H.-S. Philip Wong. 1-2 [doi]
• A 65nm Delta-Sigma ADC Based VDD-Variation-Tolerant Power-Side-Channel-Attack Monitor with Detection Capability Down to 0.25ΩShota Konno, Zachary J. Ellis, Anupam Golder, Sigang Ryu, Daniel Dinu, Avinash Varna 0001, Sanu Mathew, Arijit Raychowdhury. 1-2 [doi]
• 3D-Stacked 1Megapixel Time-Gated SPAD Image Sensor with 2D Interactive Gating Network for Image Alignment-Free Sensor FusionK. Morimoto, N. Isoda, H. Sekine, Tomoya Sasago, Y. Maehashi, S. Mikajiri, Kenzo Tojima, M. Shinohara, A. Abdelghafar, Hiroyuki Tsuchiya, K. Inoue, S. Omodani, K. Chida, A. Ehara, J. Iwata, T. Itano, Yasushi Matsuno, K. Sakurai, T. Ichikawa. 1-2 [doi]
• A 7GHz High-Bandwidth 1R-1RW SRAM for Arm HPC Processor in 3nm TechnologyR. Mathur, R. Sisodia, A. Chen, A. Singh, S. Thyagarajan, A. Cubeta, C. Andrieux, A. Sowden, Y. K. Chong. 1-2 [doi]
• MINOTAUR: An Edge Transformer Inference and Training Accelerator with 12 MBytes On-Chip Resistive RAM and Fine-Grained Spatiotemporal Power GatingKartik Prabhu, Robert M. Radway, Y. Jeffrey, Kai Bartolone, Massimo Giordano, Fabian Peddinghaus, Yonatan Urman, Win-San Khwa, Yu-Der Chih, Meng-Fan Chang, Subhasish Mitra, Priyanka Raina. 1-2 [doi]
• Mobility Evolution: Electrification and AutomationKazuoki Matsugatani. 1-4 [doi]
• Cost-Effective LLM Accelerator Using Processing in Memory TechnologyHyungdeok Lee, Guhyun Kim, Dayeon Yun, Ilkon Kim, Yongkee Kwon, Euicheol Lim. 1-2 [doi]
• Positive to Negative Schottky Barrier Transition in Metal/Oxide Semiconductor Contacts by Tuning Indium Concentration in IGZOSumi Lee, Chang Niu, Yizhi Zhang, Haiyan Wang, Peide D. Ye. 1-2 [doi]
• A 6.78 MHz Wireless Power and Data Transfer System Achieving Simultaneous 52.6% End-to-End Efficiency and 4.0 Mb/s Forward Data Delivery with Interference-Free RectifierQuanrong Zhuang, Junyi Sun, Xusheng Zhang, Bo Li, Yi Shi, Hao Qiu. 1-2 [doi]
• A 16GS/s 10b Time-domain ADC using Pipelined-SAR TDC with Delay Variability Compensation and Background Calibration Achieving 153.8dB FoM in 4nm CMOSJuzheng Liu, Ayman Shabra, Stacy Ho, Gabriele Manganaro, Mike Shuo-Wei Chen. 1-2 [doi]
• th-Order Noise Shaping SAR ADC Using EF-EF-CIFF Structure with PVT-Robust Differential V-T-V ConverterPao-Shu Liu, Yu-Hsiang Huang, Chih-Cheng Hsieh. 1-2 [doi]
• High-Resolution and Compact Integrated FMCW-LiDAR Chip with 128 Channels of Slow Light Grating AntennasY. Maeda, Y. Ebiko, H. Terada, Ryo Tetsuya, S. Maeda, Y. Yasu, Takemasa Tamanuki, M. Kamata, K. Hirotani, S. Suyama, K. Yamamoto, S. Nawa, Riku Kubota, Toshihiko Baba. 1-2 [doi]
• Expanding Design Technology Co-Optimization Potentials with Back-Side Interconnect InnovationByung-Sung Kim, Subin Choi, Jung Han Lee, Kwangmuk Lee, Jisoo Park, Jiwook Kwon, Saehan Park, Kwanyoung Chun, Harsono Simka, Aravindh Kumar, Muhammed Ahosan Ul Karim, Ken Rim, Jaihyuk Song. 1-2 [doi]
• AMD Instinct™ MI300X Accelerator: Packaging and Architecture Co-OptimizationAlan Smith 0003, Gabriel H. Loh, John J. Wuu, Samuel Naffziger, Tyrone Huang, Hugh McIntyre, Ramon Mangaser, Wonjun Jung, Raja Swaminathan. 1-2 [doi]
• A 2×56Gb/s Single-Ended Orthogonal PAM-7 Transceiver with Encoder-Based Channel-Independent Crosstalk Cancellation in 28-nm CMOSXuxu Cheng, Hongzhi Wu, Liping Zhong, Weitao Wu, Quan Pan 0002. 1-2 [doi]
• 2 area in 28-nm CMOSChongyun Zhang, Li Wang 0083, Zilu Liu, Fuzhan Chen, Quan Pan 0002, Xianbo Li, C. Patrick Yue. 1-2 [doi]
• A 1.8V-Input 0.2-to-1.5V-Output 2.5A 930mA/mm3 Always-Balanced Dual-Path Hybrid Buck Converter with Seamlessly All-VCR-Coverable Tri-Mode OperationDae-Hyeon Kim, Jeong-Hyun Cho, Hyunki Han, Hyun-Sik Kim. 1-2 [doi]
• DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAMJ. Ganguly, Hiroaki Arimura, Romain Ritzenthaler, H. Bana, J. W. Maes, J. G. Lai, S. Brus, W. Maqsood, R. Sarkar, B. Kannan, Elena Capogreco, V. Machkaoutsan, S. Yoon, Alessio Spessot, M. Givens, Naoto Horiguchi. 1-2 [doi]
• A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory ApplicationsWei-Chih Chien, J. X. Zheng, C. W. Yeh, Lynne M. Gignac, H. Y. Cheng, Z. L. Liu, Alexander Grun, C. L. Sung, E. K. Lai, S. Cheng, C. W. Cheng, L. Buzi, A. Ray, Douglas M. Bishop, Robert L. Bruce, M. J. BrightSky, H. L. Lung. 1-2 [doi]
• A 25.4-27.5 GHz Ping-Pong Charge-Sharing Locking PLL Achieving 42 fs Jitter with Implicit Reference Frequency DoublingSayan Kumar, Patchara Sawakewang, Teerachot Siriburanon, Robert Bogdan Staszewski. 1-2 [doi]
• A 640-Gb/s 4×4-MIMO D-Band CMOS Transceiver ChipsetChenxin Liu, Zheng Li 0021, Yudai Yamazaki, Hans Herdian, Chun Wang, Anyi Tian, Jun Sakamaki, Han Nie, Xi Fu, Sena Kato, Wenqian Wang, Hongye Huang, Shinsuke Hara, Akifumi Kasamatsu, Hiroyuki Sakai 0009, Kazuaki Kunihiro, Atsushi Shirane, Kenichi Okada. 1-2 [doi]
• A Subcellular-Resolution Multimodal CMOS Biosensor Array with 16K Ion-Selective Pixels for Real-Time Monitoring Potassium DynamicsHangxing Liu, Fuze Jiang, Ying Kong, Dongwon Lee, Yuguo Sheng, Adam Wang, Zhikai Huang, Marco Saif, Thomas Burger, Jing Wang, Hua Wang. 1-2 [doi]
• 2 48V-to-1V Integrated Hybrid DC-DC Converters Based on a Star-Delta Switching Network with 5x/8x Duty ExpansionChen Kong Teh, Te Bi, Shuichi Ito, Takashi Kurihara. 1-2 [doi]
• A 79.2dB-SNDR Slope-Adaptive Dynamic Zoom-and-Track Incremental sΔΔ Neural Recording Frontend with Resolution-Preservative 192mV/ms Transient TrackingSungjin Oh, Hyunsoo Song, Jose Roberto Lopez Ruiz, Wangbo Chen, Sung Yun Park, Michael P. Flynn, Euisik Yoon. 1-2 [doi]
• A Novel Method for Extracting Asymmetric Source and Drain Resistance in IGZO Vertical Channel TransistorsS. W. Yoo, Y. Lee, W. J. Jung, H. Kim, S. Byeon, M. Kim, J. Lee, T. Lee, M. J. Hong, Y. G. Song, S. Lee, M. Terai, K. J. Yoo, C. Sung, W. Lee, M. H. Cho, D. Kim, D. Ha, S. Ahn, J. H. Song. 1-2 [doi]
• Thermal Considerations for Block-Level PPA Assessment in Angstrom Era: A Comparison Study of Nanosheet FETs (A10) & Complementary FETs (A5)S. Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, Gioele Mirabelli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, D. Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert. 1-2 [doi]
• Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate LengthW. Mortelmans, P. Buragohain, C. Rogan, A. Kitamura, C. J. Dorow, K. P. O'Brien, R. Ramamurthy, J. Lux, T. Zhong, S. Harlson, E. Gillispie, T. Wilson, Adedapo Oni, A. Penumatcha, M. S. Kavrik, K. Maxey, A. Kozhakhmetov, C. C. Lin, S. Lee, A. Vyatskikh, N. Arefin, P. Fischer, J. Kevek, T. Tronic, M. Metz, S. B. Clendenning, U. Avci. 1-2 [doi]
• On the Extreme Scaling of Transistors with Monolayer MOS2 ChannelWen-Chia Wu, Terry Y. T. Hung, D. Mahaveer Sathaiya, Edward Chen, Chen-Feng Hsu, Walker Yun, Hsiang-Chi Hu, Bo-Heng Liu, T.-Y. Lee, Chi-Chung Kei, Wen Hao Chang, Jin Cai, W. Jeff, Chung-Cheng Wu, H.-S. Philip Wong, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana P. Radu. 1-2 [doi]
• Hot-Carrier-Degradation Characterization for Accurate End-of-Life Prediction with 3nm GAA Logic Technology Featuring Multi-Bridge-Channel FETSeongkyung Kim, Junkyo Jeong, Eunyu Choi, Jinyoung Kim, Hyewon Shim, Shin-Young Chung, Paul Jung. 1-2 [doi]
• An Area-Efficient True Single-Phase Clocked and Conditional Capture Flip-Flop for Ultra-Low-Power Operations in 7nm Fin-FET ProcessHyun-chul Hwang, Min-Su Kim, Daeseong Lee, Yong-geol Kim, Byung-Su Kim, Kun-hyuk Kang. 1-2 [doi]
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• A 9-GHz Subsampling-Chopper PLL with Charge-Share Cancelling and Achieving 57.8-fs-rms Jitter with 15dB In-Band Noise ImprovementXiangJian Kong, Kai Xu, Robert Bogdan Staszewski, MingChao Jian, ChunBing Guo. 1-2 [doi]
• A 430-μA 68.2-dB-SNR 133-dBSPL-AOP CMOS-MEMS Digital Microphone Based on Electrostatic Force Feedback ControlQi Zhang, Jiaqi Dong, Xinwen Zhang, Yekan Chen, Zipeng Cheng, Bo Zhao, Yuxuan Luo. 1-2 [doi]
• A 41.7TOPS/W@INT8 Computing-in-Memory Processor with Zig-Zag Backbone-Systolic CIM and Block/Self-Gating CAM for NN/Recommendation ApplicationsZhuoyu Dai, Shengzhe Yan, Zhaori Cong, Zeyu Guo 0002, Yifan He, Wenyu Sun, Chunmeng Dou, Feng Zhang 0014, Jinshan Yue, Yongpan Liu, Ming Liu 0022. 1-2 [doi]
• Comprehensive Analysis of Duty-Cycle Induced Degradations in HfxZr1-xO2-Based Ferroelectric Capacitors: Behavior, Modeling, and OptimizationGuan Feng, Yu Li, Hao Jiang, Xiaodong Wang, Yize Sun, Yingfen Wei, Qi Liu, Ming Liu. 1-2 [doi]
• A 4.6pJ/b 64Gb/s Transceiver Enabling PCIe 6.0 and CXL 3.0 in Intel 3 CMOS TechnologyDong Myung Choi, Yikui Dong, Roan Nicholson, Frank Liu, Wenyan Jia, Vadim Levin, Mike He, Sameer Pradhan, Jieqiong Du, Michael De Vita, Amanda Tran, Reza Navid, Sitaraman Iyer, Rui Song. 1-2 [doi]
• 2 High Speed MemoryShoichi Kabuyanagi, Takamasa Hamai, Masayuki Murase, Takeru Maeda, Masumi Saitoh, Shosuke Fujii. 1-2 [doi]
• A 336 x 240 Backside-Illuminated 3D-Stacked 7μm SPAD for LiDAR Sensor with PDE 28% at 940nm and under 0.4% Depth Accuracy Up to 10mJaeHyung Jang, Jongchae Kim, Sunho Oh, Kyungsu Byun, Dahwan Park, Jihee Han, Hanseung Lee, Suhyun Yi, Hoonmoo Choi, JongEun Kim, Namil Kim, Yongtae Gim, Minkyu Kim, Sangyoung Lee, Hansang Kim, Eunchang Lee, Minsang Yu, Jeongjoon Hwang, Seunghyun Yoon, Kwang Hwangbo, Heesang Kim, Ahyoung Cho, Taejun Baek, Sooyoung Park, Kwangjun Cho, Wonje Park, Kyung-Do Kim, Hoesam Jeong, Hoon Sang Oh, Changrock Song. 1-2 [doi]
• First Experimental Demonstration of Self-Aligned Flip FET (FFET): A Breakthrough Stacked Transistor Technology with 2.5T Design, Dual-Side Active and InterconnectsHaoran Lu, Yandong Ge, Xun Jiang 0002, Jiacheng Sun, Wanyue Peng, Rui Guo, Ming Li, Yibo Lin, Runsheng Wang, Heng Wu, Ru Huang 0001. 1-2 [doi]
• A 800Gb/s Transceiver for PAM-4 Optical Direct-Detection Applications in 5nm FinFet ProcessFabio Giunco, Marco Sosio, Claudio Nani, Ivan Fabiano, T. Lovitt, Victor Karam, D. Albano, C. Asero, Nicola Codega, Marco Garampazzi, Nicola Ghittori, D. Herbas, S. Ho, Enrico Monaco, Benjamín T. Reyes, P. Rossi, E. Temporiti, P. Pascale, Fernando De Bernardinis, S. Scouten, S. Jantzi. 1-2 [doi]
• 14nm FinFET Node Embedded MRAM Technology for Automotive Non-Volatile RAM Applications with Endurance Over 1E12-CyclesJoosung Oh, Jaehyeon Park, Kiseok Suh, Kangmoon Lee, Sohee Hwang, Myeongjun Bak, Honghyun Kim, Baeseong Kwon, Dongkyu Lee, Minkwan Kim, Seungmo Noh, Jongmin Lee, Soomin Cho, Gyuseong Kang, Hyun-Jin Shin, Yongsung Ji, Atsushi Okada, Ung-Hwan Pi, KwangSeok Kim, Younghyun Kim, Jeong-Heon Park, Seungpil Ko, Tae Young Lee, Kyungtae Nam, Minkwon Cho, Boyoung Seo, Shinhee Han, Yoonjong Song, Kangho Lee, Ja-Hum Ku. 1-2 [doi]
• A Confined Storage Nitride 3D-NAND Cell with WL Airgap for Cell-To-Cell Interference Reduction and Improved Program PerformancesDavide Resnati, Gianpietro Carnevale, Shyam Surthi, Chris M. Carlson, Matthew Thorum, Terry Kim, Emilio Camerlenghi, Richard Hill. 1-2 [doi]
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• Unveiling the Impact of AC PBTI on Hydrogen Formation in Oxide Semiconductor TransistorsGan Liu, Qiwen Kong, Zuopu Zhou, X. Ying, Chen Sun 0010, Kaizhen Han, Yuye Kang, Dong Zhang, Xiaolin Wang, Yang Feng, Wei Shi, Bich-Yen Nguyen, N. Kai, Gengchiau Liang, Xiao Gong. 1-2 [doi]
• An Ultra-Low Voltage Auger-Recombination Enhanced Hot Hole Injection Scheme in Implementing a 3 Bits per Cell e-DRAM CIM Macro for Inference AcceleratorT. C. Kao, M. J. Huang, Y. R. Liu, Y.-K. Wang, J.-C. Guo, Steve S. Chung. 1-2 [doi]
• rd-Order Noise CouplingKent Edrian Lozada, Ye-Dam Kim, Ho-Jin Kim, Youngjae Cho, Michael Choi, Seung-Tak Ryu. 1-2 [doi]
• A 400-ns-Settling- Time Hybrid Dynamic Voltage Frequency Scaling Architecture and Its Application in a 22-Core Network-on-Chip SoC in 12-nm FinFET TechnologyErik Jens Loscalzo, Martin Cochet, Joseph Zuckerman, Samira Zalias, Michael Lekas, Stephen Cahill, Tianyu Jia, Karthik Swaminathan, Maico Cassel dos Santos, Davide Giri, Hesam Sadeghi, Joseph Meyer, Noah Sturcken, David Brooks 0001, Gu-Yeon Wei, Luca P. Carloni, Pradip Bose, Kenneth L. Shepard. 1-2 [doi]
• A 6.5-to-6.9-GHz SSPLL with Configurable Differential Dual-Edge SSPD Achieving 44-fs RMS Jitter, -260.7-dB FOMJitter, and -76.5-dBc Reference SpurTianle Chen, Hongyu Ren, Zunsong Yang, Yunbo Huang, Xianghe Meng, Weiwei Yan, Weidong Zhang, Xuqiang Zheng, Xuan Guo, Tetsuya Iizuka, Pui-In Mak, Yong Chen 0005, Bo Li. 1-2 [doi]
• Toward 0 V ESD Protection in 2.5D/3D Advanced Bonding TechnologyS.-H. Lin, Marko Simicic, N. Pantano, S. H. Chen, Geert Van der Plas, Eric Beyne, Piet Wambacq. 1-2 [doi]
• pp Input Range for Electrical Impedance Tomography SystemsHaidam Choi, Gichan Yun, Ji-Hoon Suh, Sein Oh, Song-I Cheon, Yoontae Jung, Sohmyung Ha, Minkyu Je. 1-2 [doi]
• Photonics-Electronics Convergence Technology to Accelerate IOWNHidehiro Tsukano. 1-5 [doi]