T. Fukushima, T. Kashima, S. Seto, H. Ohtori, M. Kato, K. Katou, H. Takehira, Y. Sugawara, Z. Zhu, K. Hara, R. Osanai, T. Beppu, H. Tahara, T. Ishiku, K. Takahashi, T. Ariga, Y. Ueda, Y. Matamura, Y. Mukae, N. Takeguchi, Y. Maruyama, R. Nishikawa, H. Kitagawa, J. Asakawa, Y. Uchiyama, K. Ohuchi, K. Sekine. Fluorine-free Word Line Molybdenum Process for Enhancing Scalability and Reliability in 3D Flash Memory. In IEEE Symposium on VLSI Technology and Circuits 2024, Honolulu, HI, USA, June 16-20, 2024. pages 1-2, IEEE, 2024. [doi]
Abstract is missing.