Steven Demuynck, Victor Vega-Gonzalez, C. Toledo de Carvalho Cavalcante, L. Petersen Barbosa Lima, K. Stiers, C. Sheng, A. Vandooren, M. Hosseini, X. Zhou, Hans Mertens, Thomas Chiarella, Jürgen Bömmels, Roger Loo, E. Rosseel, Clement Porret, Y. Shimura, A. Akula, G. Mannaert, S. Choudhury, V. Brissonneau, E. Dupuy, T. Sarkar, Nathali Franchina-Vergel, A. Peter, N. Jourdan, J. P. Soulie, Kevin Vandersmissen, F. Sebaai, P. Puttarame Gowda, K. Lai, A. Mingardi, S. Sumar Sarkar, K. D'Have, B. T. Chan, A. Sepulveda Marquez, R. Langer, I. Gyo Koo, E. Altamirano Sanchez, Katia Devriendt, P. Rincon Delgadillo, F. Lazzarino, Jérôme Mitard, J. Geypen, E. Grieten, D. Batuk, Y.-F. Chen, F. Verbeek, F. Holsteyns, S. Subramanian, N. Horiguchi, S. Biesemans. Monolithic Complementary Field Effect Transistors (CFET) Demonstrated using Middle Dielectric Isolation and Stacked Contacts. In IEEE Symposium on VLSI Technology and Circuits 2024, Honolulu, HI, USA, June 16-20, 2024. pages 1-2, IEEE, 2024. [doi]
Abstract is missing.