Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer

Jiachen Duan, Yuanlei Zhang, Ye Liang, Yutao Cai, Wen Liu. Investigation of normally-OFF AlGaN/GaN MIS-HEMTs with Al2O3/ZrOx/Al2O3 charge trapping layer. In International Conference on IC Design and Technology, ICICDT 2022, Hanoi, Vietnam, September 21-23, 2022. pages 89-92, IEEE, 2022. [doi]

Abstract

Abstract is missing.