Benoit Dubois, Jean-Baptiste Kammerer, Luc Hebrard, Francis Braun. Analytical Modeling of Hot-Carrier Induced Degradation of MOS Transistor for Analog Design for Reliability. In 8th International Symposium on Quality of Electronic Design (ISQED 2007), 26-28 March 2007, San Jose, CA, USA. pages 53-58, IEEE Computer Society, 2007. [doi]
Abstract is missing.