Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi. Robust FinFET SRAM design based on dynamic back-gate voltage adjustment. Microelectronics Reliability, 54(11):2604-2612, 2014. [doi]
@article{EbrahimiAM14,
title = {Robust FinFET SRAM design based on dynamic back-gate voltage adjustment},
author = {Behzad Ebrahimi and Ali Afzali-Kusha and Hamid Mahmoodi},
year = {2014},
doi = {10.1016/j.microrel.2014.04.015},
url = {http://dx.doi.org/10.1016/j.microrel.2014.04.015},
researchr = {https://researchr.org/publication/EbrahimiAM14},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {54},
number = {11},
pages = {2604-2612},
}