Loizos Efthymiou, Martin Arnold, Giorgia Longobardi, Florin Udrea. A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit. In 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022. pages 396-399, IEEE, 2022. [doi]
@inproceedings{EfthymiouALU22,
title = {A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit},
author = {Loizos Efthymiou and Martin Arnold and Giorgia Longobardi and Florin Udrea},
year = {2022},
doi = {10.1109/ESSDERC55479.2022.9947100},
url = {https://doi.org/10.1109/ESSDERC55479.2022.9947100},
researchr = {https://researchr.org/publication/EfthymiouALU22},
cites = {0},
citedby = {0},
pages = {396-399},
booktitle = {52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022},
publisher = {IEEE},
isbn = {978-1-6654-8497-8},
}