Table of Contents

• Quantum Computing Technology and RoadmapHeike Riel. 25-30 [doi]
• SiC Power Device Mass CommercializationV. Veliadis. 31-36 [doi]
• Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability EnhancementC. Laguna, Mathieu Bernard, Julien Garrione, Niccolo Castellani, V. Meli, S. Martin, François Aussenac, D. Rouchon, N. Rochat, Emmanuel Nolot, Guillaume Bourgeois, Marie-Claire Cyrille, Liviu Militaru, A. Souifi, François Andrieu, Gabriele Navarro. 225-228 [doi]
• Characterization of reset state through energy activation study in Ge-GST based ePCMMatteo Baldo, Lorenzo Turconi, Alessandro Motta, Elisa Petroni, Luca Laurin, Daniele Ielmini, Andrea Redaelli. 229-232 [doi]
• Enhanced Thermal Confinement in Phase-Change Memory Targeting Current ReductionC. De Camaret, Guillaume Bourgeois, Olga Cueto, V. Meli, S. Martin, D. Despois, V. Beugin, Niccolo Castellani, Marie-Claire Cyrille, François Andrieu, Julien Arcamone, Y. Le-Friec, Gabriele Navarro. 233-236 [doi]
• TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class MemoryGiusy Lama, Mathieu Bernard, Julien Garrione, Nicolas Bernier, Niccolo Castellani, Guillaume Bourgeois, Marie-Claire Cyrille, François Andrieu, Gabriele Navarro. 237-240 [doi]
• Design exploration of IGZO diode based VCMA array design for Storage Class Memory ApplicationsMohit Gupta 0004, Manu Perumkunnil, Andrea Fantini, Saeideh Alinezhad Chamazcoti, Woojin Kim, Marie Garcia Bardon, Gouri Sankar Kar, Arnaud Furnémont. 241-244 [doi]
• Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power CircuitsOlga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot. 245-248 [doi]
• Effect of Post Annealing on the Electrical Characteristics and Deep Level Defects of Ga2O3/SiC Heterojunction DiodesDong-Wook Byun, Min Yeong Kim, Soo Young Moon, Myeongcheol Shin, Michael. A Schweitz, Sang-Mo Koo. 249-252 [doi]
• BEoL integrated hafnium zirconium oxide varactors for tunable mmWave applicationsSukhrob Abdulazhanov, Dang Khoa Huynh, Quang Huy Le, David Lehninger, Thomas Kämpfe, Gerald Gerlach. 253-256 [doi]
• In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applicationsF. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota. 257-260 [doi]
• III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performanceAbhitosh Vais, Sachin Yadav, Yves Mols, Bjorn Vermeersch, Komal Vondkar Kodandarama, Marina Baryshnikova, G. Mannaert, R. Alcotte, Geert Boccardi, Piet Wambacq, Bertrand Parvais, R. Langer, Bernardette Kunert, Nadine Collaert. 261-264 [doi]
• Co-integration Process Compatible Input/Output (I/O) Device Options for GAA Nanosheet TechnologyGautam Gaddemane, Krishna K. Bhuwalka, Philippe Matagne, Gerhard Rzepa, Maarten L. Van De Put, Sybren Santermans, Oskar Baumgartner, Hao Wu, Geert Hellings. 265-268 [doi]
• Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI TechnologyHung-Chi Han, Farzan Jazaeri, Antonio A. D'Amico, Zhixing Zhao, Steffen Lehmann, Claudia Kretzschmar, Edoardo Charbon, Christian C. Enz. 269-272 [doi]
• A Novel Approach to Modeling Insulator Wave-Function Penetration and Interface Roughness Scattering in MOSFETsZlatan Stanojevic, Lee-Chi Hung, Chen-Ming Tsai, Markus Karner. 273-276 [doi]
• On the convergence of the recurrence solution of McIntyre's local and non-local avalanche triggering probability equations for SPAD compact modelsDorian Saint-Pierre, Raphaël Clerc, Rémi Helleboid, Denis Rideau. 277-280 [doi]
• A self-sustaining Single Photon Avalanche Diode ModelSven Rink, V. Quenette, Jean-Robert Manouvrier, Andre Juge, Gilles Gouget, Denis Rideau, R. A. Bianchi, Dominique Golanski, Bastien Mamdy, Jean-Baptiste Kammerer, Wilfried Uhring, Christophe Lallement, Sara Pellegrini, Megan Agnew, Bruce Rae. 281-284 [doi]
• Thermal Sensing Performances of Thin-Film Lateral PiN Diodes at 80 K and 300 KAdrien Fournol, Jérémy Blond, Abdelkader Aliane, Hacile Kaya, Jérôme Meilhan, Laurent Dussopt. 285-288 [doi]
• MEMS optical microphone based on light phase modulationNiccolo De Milleri, Güclü Onaran, Andreas Wiesbauer, Andrea Baschirotto. 289-292 [doi]
• Filament Localization and Characterization in Hf02 ReRAM Cells using Laser StimulationFranco Stellari, Ernest Y. Wu, Martin M. Frank, Leonidas E. Ocala, Takashi Ando, Peilin Song. 293-296 [doi]
• Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAMTommaso Stecconi, Youri Popoff, Roberto Guido, Donato Francesco Falcone, Mattia Halter, Marilyne Sousa, Folkert Horst, Antonio La Porta, Bert J. Offrein, Valeria Bragaglia. 297-300 [doi]
• Impact of Gold Interconnect Microstructure on Electromigration Failure Time StatisticsHajdin Ceric, Roberto Lacerda de Orio, Siegfried Selberherr. 301-303 [doi]
• Influence of Metal on Schottky Barrier Inhomogeneity in Ga2O3 Schottky Barrier DiodesMin Yeong Kim, Geon Hee Lee, Hee-Jae Lee, Dong-Wook Byun, Michael A. Schweitz, Sang-Mo Koo. 304-307 [doi]
• Compact Modeling of Phase Change Memory with Parameter ExtractionsFeilong Ding, Xi Li, Yihan Chen, Zhitang Song, Runsheng Wang, Clarissa C. Prawoto, Mansun Chan, Lining Zhang, Ru Huang. 308-311 [doi]
• A novel Approach to measure and model Plasma Noise in Avalanche DiodesElmar Gondro, Joost Willemen, Peter Bauer. 312-315 [doi]
• Self-consistent Automated Parameter Extraction of RRAM Physics-Based Compact ModelTommaso Zanotti, Paolo Pavan, Francesco Maria Puglisi. 316-319 [doi]
• InP DHBT test structure optimization towards 110 GHz characterizationNil Davy, Marina Deng, Virginie Nodjiadjim, Chhandak Mukherjee, Muriel Riet, Colin Mismer, Jérémie Renaudier, Cristell Maneux. 320-323 [doi]
• Trap Behavior of Metamorphic HEMTs with Pulsed IV and $1/f$ Noise MeasurementKi-Yong Shin, Ju-Won Shin, Surajit Chakraborty, Walid Amir, Chan Soo Shin, Tae-Woo Kim. 324-327 [doi]
• Analysis and Optimization of an Analog MOSFET with a Slit Well at Channel Center Towards Higher Output ResistanceHiroki Fujii, Jaehyun Yoo, Dawon Jeong, Seongsik Min, Myoungsoo Kim, Uihui Kwon, Dae Sin Kim. 328-331 [doi]
• Highly robust and reliable power amplifiers in 22FDX and 45RFSOI technologiesA. Bossuet, A. Divay, Baudouin Martineau, Cedric Dehos, B. Blampey, Y. Morandini. 332-335 [doi]
• Joint Modeling of Multi-Domain Ferroelectric and Distributed Channel towards Unveiling the Asymmetric Abrupt DC Current Jump in Ferroelectric FETSimon Thomann, Kai Ni 0004, Hussam Amrouch. 336-339 [doi]
• Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel JunctionsMattia Segatto, Marco Massarotto, Suzanne Lancaster, Quang T. Duong, A. Affanni, Riccardo Fontanini, Francesco Driussi, Daniel Lizzit, Thomas Mikolajick, Stefan Slesazeck, David Esseni. 340-343 [doi]
• Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional EffectsDaniel Lizzit, Thomas Bernardi, David Esseni. 344-347 [doi]
• Spin Torques in ULTRA-Scaled MRAM DevicesSimone Fiorentini, Mario Bendra, Johannes Ender, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov. 348-351 [doi]
• The Environmental Footprint of IC Production: Meta-Analysis and Historical TrendsThibault Pirson, Thibault P. Delhaye, Alex Pip, Grégoire Le Brun, Jean-Pierre Raskin, David Bol. 352-355 [doi]
• Experimental fabrication of an ESF3 floating gate flash cell in an FD-SOI processNicki Mika, Thomas Melde, Stefan Dünkel, Michael Otto, Francois Weisbuch, Peter Krottenthaler, Thomas Mikolajick. 356-359 [doi]
• GeSn Vertical Gate-all-around Nanowire n-type MOSFETsYannik Junk, Marvin Frauenrath, Yi Han, Omar Concepción Diaz, Jin Hee Bae, Jean-Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing-Tai Zhao. 364-367 [doi]
• Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium OxideSara Vecchi, Paolo Pavan, Francesco Maria Puglisi. 368-371 [doi]
• A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer TrapsMarcello Cioni, Nicolò Zagni, Alessandro Chini. 372-375 [doi]
• Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature InstabilitiesChristoph Wilhelmer, Dominic Waldhoer, Markus Jech, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Michael Waltl, Tibor Grasser. 376-379 [doi]
• Silicon-Impurity Defects in Calcium Fluoride: A First Principles StudyDominic Waldhoer, Bibhas Manna, Al-Moatasem Bellah El-Sayed, Theresia Knobloch, Yury Illarionov, Tibor Grasser. 380-383 [doi]
• Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN bufferAliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana ElKashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais. 384-387 [doi]
• A novel approach to analyze the reliability of GaN power HEMTs operating in a DC-DC Buck converterGiuseppe Capasso, Mauro Zanuccoli, Andrea Natale Tallarico, Claudio Fiegna. 392-395 [doi]
• A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuitLoizos Efthymiou, Martin Arnold, Giorgia Longobardi, Florin Udrea. 396-399 [doi]
• Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate StructureMamta Pradhan, Matthias Moser, Mohammed Alomari, Joachim N. Burghartz, Ingmar Kallfass. 400-403 [doi]