Mamta Pradhan, Matthias Moser, Mohammed Alomari, Joachim N. Burghartz, Ingmar Kallfass. Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure. In 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022. pages 400-403, IEEE, 2022. [doi]
Abstract is missing.