Francis Balestra - researchr alias

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Viewing Publication 1 - 11 from 11

2023

Experimental Study of Self-Heating Effect in InGaAs HEMTs for Quantum Technologies Down to 10KF. Serra Di Santa Maria, Francis Balestra, Christoforos G. Theodorou, Gérard Ghibaudo, Cezar B. Zota, Eunjung Cha. irps 2023: 1-4 [doi]

2022

In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to cryogenic temperatures for low-power quantum applicationsF. Serra Di Santa Maria, Christoforos G. Theodorou, Francis Balestra, Gérard Ghibaudo, Eunjung Cha, Cezar B. Zota. essderc 2022: 257-260 [doi]

2021

Status and trends in Nanoelectronic devices for the ultimate integration of ICsFrancis Balestra. asicon 2021: 1-4 [doi]

2019

Nanoscale Devices for the end of the RoadmapFrancis Balestra. asicon 2019: 1-4 [doi]

2017

Ultra low power and high performance nanoelectronic devicesFrancis Balestra. asicon 2017: 1049-1052 [doi]

Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memoryAdam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, Francis Balestra. mr, 69:47-51, 2017. [doi]

2012

New parameter extraction method based on split C-V for FDSOI MOSFETsImed Ben Akkez, Antoine Cros, Claire Fenouillet-Béranger, Frédéric Boeuf, Q. Rafhay, Francis Balestra, G. Ghibaudo. essderc 2012: 217-220 [doi]

2009

Investigation of defects introduced by static and dynamic hot carrier stress on SOI partially depleted body-contact MOSFETsM. A. Exarchos, G. J. Papaioannou, Jalal Jomaah, Francis Balestra. mr, 49(9-11):1018-1023, 2009. [doi]

2004

On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETsM. A. Exarchos, François Dieudonné, Jalal Jomaah, G. J. Papaioannou, Francis Balestra. mr, 44(9-11):1643-1647, 2004. [doi]

2003

Low frequency noise in 0.12 mum partially and fully depleted SOI technologyFrançois Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra. mr, 43(2):243-248, 2003. [doi]

2000

0.25 μm SOI technologies performance for low-power radio-frequency applicationsO. Rozeau, Sébastien Haendler, Jalal Jomaah, J. Boussey, Francis Balestra, C. Raynaud, J. L. Pelloie. icecsys 2000: 45-48 [doi]

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