Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory

Adam Dobri, Simon Jeannot, Fausto Piazza, Carine Jahan, Jean Coignus, Luca Perniola, Francis Balestra. Development and application of the Oxide Stress Separation technique for the measurement of ONO leakage currents at low electric fields in 40 nm floating gate embedded-flash memory. Microelectronics Reliability, 69:47-51, 2017. [doi]

Abstract

Abstract is missing.