TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory

Giusy Lama, Mathieu Bernard, Julien Garrione, Nicolas Bernier, Niccolo Castellani, Guillaume Bourgeois, Marie-Claire Cyrille, François Andrieu, Gabriele Navarro. TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory. In 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022. pages 237-240, IEEE, 2022. [doi]

Abstract

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