TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory

Giusy Lama, Mathieu Bernard, Julien Garrione, Nicolas Bernier, Niccolo Castellani, Guillaume Bourgeois, Marie-Claire Cyrille, François Andrieu, Gabriele Navarro. TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory. In 52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022. pages 237-240, IEEE, 2022. [doi]

@inproceedings{LamaBGBCBCAN22,
  title = {TiTe/Ge2Sb2Te5Bi-layer-based Phase-Change Memory Targeting Storage Class Memory},
  author = {Giusy Lama and Mathieu Bernard and Julien Garrione and Nicolas Bernier and Niccolo Castellani and Guillaume Bourgeois and Marie-Claire Cyrille and François Andrieu and Gabriele Navarro},
  year = {2022},
  doi = {10.1109/ESSDERC55479.2022.9947157},
  url = {https://doi.org/10.1109/ESSDERC55479.2022.9947157},
  researchr = {https://researchr.org/publication/LamaBGBCBCAN22},
  cites = {0},
  citedby = {0},
  pages = {237-240},
  booktitle = {52nd IEEE European Solid-State Device Research Conference, ESSDERC 2022, Milan, Italy, September 19-22, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-8497-8},
}