An ESD transient clamp with 494 pA leakage current in GP 65 nm CMOS technology - researchr publication authors

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Mahdi Elghazali, Manoj Sachdev, Ajoy Opal. An ESD transient clamp with 494 pA leakage current in GP 65 nm CMOS technology. In 19th International Symposium on Quality Electronic Design, ISQED 2018, Santa Clara, CA, USA, March 13-14, 2018. pages 214-220, IEEE, 2018. [doi]

This author has not been identified. Look up 'Mahdi Elghazali' in GoogleThis author has not been identified. Look up 'Manoj Sachdev' in GoogleThis author has not been identified. Look up 'Ajoy Opal' in Google

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