Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films

Tetsuo Endoh, Kazuyuki Hirose, Kenji Shiraishi. Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films. IEICE Transactions, 90-C(5):955-961, 2007. [doi]

Abstract

Abstract is missing.