Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction

Magali Estrada, Antonio Cerdeira, Adelmo Ortiz-Conde, Francisco GarcĂ­a. Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction. Microelectronics Reliability, 41(4):605-610, 2001. [doi]

Abstract

Abstract is missing.