Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, G. Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, T. Iizuka, M. Taguchi, Shigetaka Kumashiro, S. Miyamoto. Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. Mathematics and Computers in Simulation, 79(4):1096-1106, 2008. [doi]
Abstract is missing.