19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology - researchr publication authors

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Rich Fackenthal, Makoto Kitagawa, Wataru Otsuka, Kirk Prall, Duane Mills, Keiichi Tsutsui, Johnny Javanifard, Kerry Tedrow, Tomohito Tsushima, Yoshiyuki Shibahara, Glen Hush. 19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 338-339, IEEE, 2014. [doi]

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