Rich Fackenthal, Makoto Kitagawa, Wataru Otsuka, Kirk Prall, Duane Mills, Keiichi Tsutsui, Johnny Javanifard, Kerry Tedrow, Tomohito Tsushima, Yoshiyuki Shibahara, Glen Hush. 19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology. In 2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014. pages 338-339, IEEE, 2014. [doi]
@inproceedings{FackenthalKOPMT14,
title = {19.7 A 16Gb ReRAM with 200MB/s write and 1GB/s read in 27nm technology},
author = {Rich Fackenthal and Makoto Kitagawa and Wataru Otsuka and Kirk Prall and Duane Mills and Keiichi Tsutsui and Johnny Javanifard and Kerry Tedrow and Tomohito Tsushima and Yoshiyuki Shibahara and Glen Hush},
year = {2014},
doi = {10.1109/ISSCC.2014.6757460},
url = {https://doi.org/10.1109/ISSCC.2014.6757460},
researchr = {https://researchr.org/publication/FackenthalKOPMT14},
cites = {0},
citedby = {0},
pages = {338-339},
booktitle = {2014 IEEE International Conference on Solid-State Circuits Conference, ISSCC 2014, Digest of Technical Papers, San Francisco, CA, USA, February 9-13, 2014},
publisher = {IEEE},
isbn = {978-1-4799-0918-6},
}