Transient current and delay analysis for resistive-open defects in future 16 nm CMOS circuits

Mohammad Fawaz, Nader Kobrosli, Ahmad Chkeir, Ali Chehab, Ayman I. Kayssi. Transient current and delay analysis for resistive-open defects in future 16 nm CMOS circuits. In 17th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2010, Athens, Greece, 12-15 December, 2010. pages 438-441, IEEE, 2010. [doi]

Abstract

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