Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications - researchr publication authors

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Patrick Fay, Gary H. Bernstein, David H. Chow, J. Schulman, Pinaki Mazumder, W. Williamson, B. K. Gilbert. Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications. In 9th Great Lakes Symposium on VLSI (GLS-VLSI 99), 4-6 March 1999, Ann Arbor, MI, USA. pages 162-165, IEEE Computer Society, 1999. [doi]

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