Patrick Fay, Gary H. Bernstein, David H. Chow, J. Schulman, Pinaki Mazumder, W. Williamson, B. K. Gilbert. Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications. In 9th Great Lakes Symposium on VLSI (GLS-VLSI 99), 4-6 March 1999, Ann Arbor, MI, USA. pages 162-165, IEEE Computer Society, 1999. [doi]
@inproceedings{FayBCSMWG99,
title = {Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications},
author = {Patrick Fay and Gary H. Bernstein and David H. Chow and J. Schulman and Pinaki Mazumder and W. Williamson and B. K. Gilbert},
year = {1999},
url = {http://csdl.computer.org/comp/proceedings/glsvlsi/1999/0104/00/01040162abs.htm},
researchr = {https://researchr.org/publication/FayBCSMWG99},
cites = {0},
citedby = {0},
pages = {162-165},
booktitle = {9th Great Lakes Symposium on VLSI (GLS-VLSI 99), 4-6 March 1999, Ann Arbor, MI, USA},
publisher = {IEEE Computer Society},
isbn = {0-7695-0104-4},
}