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Impact of nitrogen incorporation on interface states in (100)Si/HfO::2::

Y. G. Fedorenko, L. Truong, V. V. Afanasev, A. Stesmans, Z. Zhang, Stephen A. Campbell. Impact of nitrogen incorporation on interface states in (100)Si/HfO::2::. Microelectronics Reliability, 45(5-6):802-805, 2005. [doi]

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Y. G. Fedorenko

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L. Truong

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V. V. Afanasev

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A. Stesmans

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Z. Zhang

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Stephen A. Campbell

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